Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742
Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Author: Stephen E. Saddow

Publisher:

Published: 2003-03-25

Total Pages: 432

ISBN-13:

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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials IV
Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials IV

Author: Tatsuki Ohji

Publisher: John Wiley & Sons

Published: 2010-11-23

Total Pages: 260

ISBN-13: 0470944056

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This issue contains 25 invited and contributed papers, all peer reviewed according to the American Ceramic Society Review Process. The latest developments in processing and manufacturing technologies are covered, including green manufacturing, smart processing, advanced composite manufacturing, rapid processing, joining, machining, and net shape forming technologies. These papers discuss the most important aspects necessary for understanding and further development of processing and manufacturing of ceramic materials and systems.

GaN and Related Alloys - 2002: Volume 743
GaN and Related Alloys - 2002: Volume 743

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-06-02

Total Pages: 900

ISBN-13:

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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Novel Materials and Processes for Advanced CMOS: Volume 745
Novel Materials and Processes for Advanced CMOS: Volume 745

Author: Mark I. Gardner

Publisher:

Published: 2003-03-25

Total Pages: 408

ISBN-13:

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Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.

Solid-State Ionics - 2002: Volume 756
Solid-State Ionics - 2002: Volume 756

Author: Philippe Knauth

Publisher:

Published: 2003-04-17

Total Pages: 608

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Membranes: Volume 752
Membranes: Volume 752

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-04-11

Total Pages: 376

ISBN-13:

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The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.

CMOS Front-End Materials and Process Technology: Volume 765
CMOS Front-End Materials and Process Technology: Volume 765

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-09-12

Total Pages: 336

ISBN-13:

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In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.

Organic and Polymeric Materials and Devices
Organic and Polymeric Materials and Devices

Author: Materials Research Society. Meeting

Publisher:

Published: 2003

Total Pages: 438

ISBN-13:

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The field of organic semiconductors has seen much development in the past years. Displays based on light-emitting diodes made of small organic molecules as well as polymers, have recently been commercialized. Other applications, such as electronic circuits for tagging, efficient photovoltaic devices and biosensors, have already been demonstrated. This volume brings together a "wish list" of leading researchers in the fields of chemistry, physics and technology of organic devices. Novel device concepts such as charge-generation layers, metal complexes and the use of heterojunctions are presented and should lead to further improvement in the efficiency of organic light-emitting diodes. In the field of organic transistors, major progress is reported on the charge-transport properties of organic semiconductors; mobilities up to 5cm2/Vs are reported for pentacene-based transistors. High mobility n-type materials, which enable the development of ambipolar organic electronic circuits, are also discussed. And new approaches to fully printable displays on substrates, such as textiles and paper, are presented. These may lead the way to new applications of organic optoelectronic devices.

Solid-State Chemistry of Inorganic Materials IV: Volume 755
Solid-State Chemistry of Inorganic Materials IV: Volume 755

Author: M. Á. Alario-Franco

Publisher:

Published: 2003-08-14

Total Pages: 512

ISBN-13:

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Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.

Crystalline Oxide: Volume 747
Crystalline Oxide: Volume 747

Author: D. G. Schlom

Publisher:

Published: 2003-06-23

Total Pages: 408

ISBN-13:

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This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.