Reliability and Radiation Effects in Compound Semiconductors
Reliability and Radiation Effects in Compound Semiconductors

Author: Allan H. Johnston

Publisher: World Scientific

Published: 2010

Total Pages: 376

ISBN-13: 9814277118

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This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

Compound Semiconductor Integrated Circuits
Compound Semiconductor Integrated Circuits

Author: Tho T. Vu

Publisher: World Scientific

Published: 2003

Total Pages: 363

ISBN-13: 9812383115

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This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices
Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices

Author: Dan M. Fleetwood

Publisher: World Scientific

Published: 2004

Total Pages: 354

ISBN-13: 9789812794703

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This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."

Nano-Semiconductors
Nano-Semiconductors

Author: Krzysztof Iniewski

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 602

ISBN-13: 1351833359

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With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Modeling, Design, and Simulation of Systems with Uncertainties
Modeling, Design, and Simulation of Systems with Uncertainties

Author: Andreas Rauh

Publisher: Springer Science & Business Media

Published: 2011-06-06

Total Pages: 356

ISBN-13: 3642159567

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To describe the true behavior of most real-world systems with sufficient accuracy, engineers have to overcome difficulties arising from their lack of knowledge about certain parts of a process or from the impossibility of characterizing it with absolute certainty. Depending on the application at hand, uncertainties in modeling and measurements can be represented in different ways. For example, bounded uncertainties can be described by intervals, affine forms or general polynomial enclosures such as Taylor models, whereas stochastic uncertainties can be characterized in the form of a distribution described, for example, by the mean value, the standard deviation and higher-order moments. The goal of this Special Volume on Modeling, Design, and Simulation of Systems with Uncertainties is to cover modern methods for dealing with the challenges presented by imprecise or unavailable information. All contributions tackle the topic from the point of view of control, state and parameter estimation, optimization and simulation. Thematically, this volume can be divided into two parts. In the first we present works highlighting the theoretic background and current research on algorithmic approaches in the field of uncertainty handling, together with their reliable software implementation. The second part is concerned with real-life application scenarios from various areas including but not limited to mechatronics, robotics, and biomedical engineering.