These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
The 1982 Antwerp Advanced Study Institute on "Physics of Polarons and Excitons in Polar Semiconductors and Ionic Crystals" took place from July 26 till August 5 at the Conference Center Priorij Corsen donk, a restored monastery, close to the city of Antwerp. It was the seventh Institute in our series which started in 1971. This Advanced Study Institute, which was held fifty years after Landau introduced the polaron concept, can be considered as the third major international symposium devoted to the physics of pola rons. The first such symposium took place in St. Andrews in 1962 under the title "Polarons and Excitons" [I]. The early theoretical developments related to polarons were reviewed in depth at this meeting; the derivation of the polaron hamiltonian by Frohlich, the Frohlich weak coupling theory (and the equivalent weak coupling canonical transformations), the Landau-Pekar and Bogolubov strong coupling theory and the Feynman polaron model formulated with his path integrals. The main emphasis was on the polaron self-energy, effective mass and mobility. From the experimental side the first evidence for polaron effects was provided by the pioneering cyclotron and mobility measurements o~ the silver halides by F. e. Brown and his group. Also the significance of polaron effects for the under standing of excitons in ionic crystals was a central topic in St. Andrews. The second Advanced Study Institute concerning polaron physics was organized at the University of Antwerp (R. U. C. A.
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
A benchmark publication, the first edition of the Phosphor Handbook, published in 1998, set the standard for references in the field. The second edition, updated and published in 2007, began exploring new and emerging fields. However, in the last 14 years, since the second edition was published, many notable advances and broader phosphor applications have occurred. Completely revised, updated, and expanded into three separate volumes, this third edition of the Handbook covers the most recent developments in phosphor research, characterization, and applications. This volume on ‘Fundamentals of Luminescence’ elucidates the theoretical background and fundamental properties of luminescence as applied to solid-state phosphor materials. The book includes the chapters that cover: Basic principles of luminescence, the principal phosphor materials, and their optical properties New developments in principal phosphors in nitrides, perovskite, and silicon carbide Revised lanthanide level locations and its impact on phosphor performance Detailed descriptions of energy transfer and upconversion processes in bulk and nanoscaled particles and core-shell structures Rapid developing organic and polymer luminescent materials and devices
These proceedings cover the lectures delivered at the Third International Summer College on Physics and Contemporary Needs held from June 17 - July 5, 1978 at Nathiagali, one of the scenic hill resorts in the northern part of Pakistan. The college was organized by The Pakistan Atomic Energy Commission (PAEC) and co-sponsored by the International Centre for Theoretical Physics, Trieste (ICTP). It also received a financial grant by the University Grants Commission for the participation of physicists from various universities of Pakistan. The college was attended by 14 lecturers, 2 invited seminar speakers and 156 participants from 23 countries and consisted of 15 concen trated days of lectures, seminars and informal discussions. These proceedings contain only regular lectures delivered there, but the seminars which were held there are listed in the Appendix. This year the college put special emphasis on energy, parti cularly on nuclear energy and its role in the context of energy sys tems. However the lectures delivered at the college also covered a wide spectrum of physics. The lectures gave an overview of various topics covered at the college and emphasized the inter-disciplinary aspects of physics. Some of the lecturers also indicated the areas where research in developing countries with limited facilities could be carried out. The college had a definite objective of encouraging the physicists, part~cularly those working at the universities, to apply their knowledge of physics and methodology of research to the needs of modern society.
Structurally disordered solids are characterized by their lack of spatial order that is evidenced by the great variety of ordered solids. The former class of materials is commonly termed amorphous or glassy, the latter crystalline. However, both classes share, many of the other physical properties of solids, e. g. , me chanical stability, resistance to shear stress, etc. The traditional macroscopic distinction between the crystalline and the glassy states is that while the former has a fixed melting point, the latter does not. However, with the availability and production of a large number of materials in both crystalline and amorphous states, and their easy inter-convertability, simple de finitions are not possible or at best imprecise. For the present purpose, it is sufficient to say that in contrast to the crystalline state, in which the posi tions of atoms are fixed into adefinite structure, ex cept for small thermal vibrations, the amorphous state of the same material displays varying degrees of de parture from this fixed structure. The amorphous state almost always shows no long range order. Short range order, up to several neighbors, may often be retained, although averaged considerably around their crystalline values. It is generally believed that the amorphous state is a metastable one with respect to the crystal line ordered state, and the conversion to the crystal line state may or may not be easy depending on the na ture of the material, e. g.
