Cathodoluminescence Characterization of Ion Implanted GaAs
Cathodoluminescence Characterization of Ion Implanted GaAs

Author: Milton L. Cone

Publisher:

Published: 1980

Total Pages: 135

ISBN-13:

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The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).

Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity

Author: Bill W. Mullins

Publisher:

Published: 1979

Total Pages: 66

ISBN-13:

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The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Author:

Publisher: Academic Press

Published: 1997-06-12

Total Pages: 335

ISBN-13: 0080864430

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Analytical Techniques for the Characterization of Compound Semiconductors
Analytical Techniques for the Characterization of Compound Semiconductors

Author: G. Bastard

Publisher: Elsevier

Published: 1991-07-26

Total Pages: 554

ISBN-13: 0444596720

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This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.