Scientific and Technical Aerospace Reports
Author:
Publisher:
Published: 1992
Total Pages: 1572
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author:
Publisher:
Published: 1992
Total Pages: 1572
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher: Academic Press
Published: 1997-06-12
Total Pages: 335
ISBN-13: 0080864430
DOWNLOAD EBOOKDefects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: G. Bastard
Publisher: Elsevier
Published: 1991-07-26
Total Pages: 554
ISBN-13: 0444596720
DOWNLOAD EBOOKThis volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Author:
Publisher:
Published: 1979
Total Pages: 1186
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1982
Total Pages: 1114
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1996
Total Pages: 1720
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1977
Total Pages: 640
ISBN-13:
DOWNLOAD EBOOKAuthor: Yale Strausser
Publisher: Momentum Press
Published: 2010
Total Pages: 217
ISBN-13: 1606500414
DOWNLOAD EBOOK"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Author: Dieter K. Schroder
Publisher: Wiley-Interscience
Published: 1990-07-04
Total Pages: 648
ISBN-13:
DOWNLOAD EBOOKThe first book devoted to modern techniques of semiconductor characterization, this comprehensive guide to semiconductor measurement methods is detailed enough for a two-term graduate course. Organized for quick access so that it can be used as a handbook of specific characterization techniques. Processes are characterized through the use of test structures and the main techniques used within the semiconductor industry are thoroughly explained. While the majority of the book is devoted to widely used electrical characterization methods, the more specialized optical, chemical and physical methods are also covered. Contains over 1,300 references.