Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Author:

Publisher: Academic Press

Published: 1997-06-12

Total Pages: 335

ISBN-13: 0080864430

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination


Analytical Techniques for the Characterization of Compound Semiconductors

Analytical Techniques for the Characterization of Compound Semiconductors

Author: G. Bastard

Publisher: Elsevier

Published: 1991-07-26

Total Pages: 554

ISBN-13: 0444596720

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This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.


Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing

Author: Yale Strausser

Publisher: Momentum Press

Published: 2010

Total Pages: 217

ISBN-13: 1606500414

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"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.


Semiconductor Material and Device Characterization

Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: Wiley-Interscience

Published: 1990-07-04

Total Pages: 648

ISBN-13:

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The first book devoted to modern techniques of semiconductor characterization, this comprehensive guide to semiconductor measurement methods is detailed enough for a two-term graduate course. Organized for quick access so that it can be used as a handbook of specific characterization techniques. Processes are characterized through the use of test structures and the main techniques used within the semiconductor industry are thoroughly explained. While the majority of the book is devoted to widely used electrical characterization methods, the more specialized optical, chemical and physical methods are also covered. Contains over 1,300 references.