ULSI Process Integration 6
ULSI Process Integration 6

Author: C. Claeys

Publisher: The Electrochemical Society

Published: 2009-09

Total Pages: 547

ISBN-13: 1566777445

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ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

ULSI Process Integration 5
ULSI Process Integration 5

Author: Cor L. Claeys

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 509

ISBN-13: 1566775728

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The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

Author: D. Harame

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 1066

ISBN-13: 1566778255

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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.