The Rudolf Mössbauer Story
The Rudolf Mössbauer Story

Author: Michael Kalvius

Publisher: Springer Science & Business Media

Published: 2012-01-14

Total Pages: 443

ISBN-13: 3642179525

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The “Rudolf Mössbauer Story” recounts the history of the discovery of the “Mössbauer Effect” in 1958 by Rudolf Mössbauer as a graduate student of Heinz Maier-Leibnitz for which he received the Nobel Prize in 1961 when he was 32 years old. The development of numerous applications of the Mössbauer Effect in many fields of sciences , such as physics, chemistry, biology and medicine is reviewed by experts who contributed to this wide spread research. In 1978 Mössbauer focused his research interest on a new field “Neutrino Oscillations” and later on the study of the properties of the neutrinos emitted by the sun.

Advanced Silicon Carbide Devices and Processing
Advanced Silicon Carbide Devices and Processing

Author: Stephen Saddow

Publisher: BoD – Books on Demand

Published: 2015-09-17

Total Pages: 260

ISBN-13: 9535121685

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Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Silicon Carbide
Silicon Carbide

Author: Sofia H. Vanger

Publisher:

Published: 2011

Total Pages: 0

ISBN-13: 9781611223125

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Silicon Carbide (SiC) is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. This combination of properties makes them ideal candidates for tribological, semiconductor and MEMs, and optoelectronic applications. However, SiC is also known for its low fracture toughness, extreme brittleness and poor machinability. This book presents topical research data in the study of silicon carbide, including the etching and thin film formation of silicon carbide using highly reactive gases; production and characterisation of SiC particles; microstructure of silicon carbide nanowires; ductile regime material removal of silicon carbide; limitation of SiC in the liquid-state processing of Al-MMC; and the effects of ion implantation in silicon carbide.

Loose Leaf Version for Engineering Mechanics: Statics and Dynamics
Loose Leaf Version for Engineering Mechanics: Statics and Dynamics

Author: Gary Gray

Publisher: McGraw-Hill Education

Published: 2012-01-24

Total Pages:

ISBN-13: 9780077491291

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Plesha, Gray, & Costanzo's Engineering Mechanics, 2e is the Problem Solver's Approach for Tomorrow's Engineers. Based upon a great deal of classroom teaching experience, Plesha, Gray, & Costanzo provide a visually appealing learning framework to your students. The look of the presentation is modern, like the other books the students have experienced, and the presentation itself is relevant, with examples and exercises drawn from the world around us, not the world of sixty years ago. Examples are broken down in a consistent manner that promotes students' ability to setup a problem and easily solve problems of incrementally harder difficulty. Engineering Mechanics is also accompanied by McGraw-Hill's Connect which allows the professor to assign homework, quizzes, and tests easily and automatically grades and records the scores of the students' work. Most problems in Connect are randomized to prevent sharing of answers and most also have a "multi-step solution" which helps move the students' learning along if they experience difficulty. Engineering Mechanics, 2e by Plesha, Gray, & Costanzo, a new dawn for statics and dynamics.

Rigidity Theory and Applications
Rigidity Theory and Applications

Author: M.F. Thorpe

Publisher: Springer Science & Business Media

Published: 2006-04-11

Total Pages: 435

ISBN-13: 0306470896

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Although rigidity has been studied since the time of Lagrange (1788) and Maxwell (1864), it is only in the last twenty-five years that it has begun to find applications in the basic sciences. The modern era starts with Laman (1970), who made the subject rigorous in two dimensions, followed by the development of computer algorithms that can test over a million sites in seconds and find the rigid regions, and the associated pivots, leading to many applications. This workshop was organized to bring together leading researchers studying the underlying theory, and to explore the various areas of science where applications of these ideas are being implemented.

SiGe and Ge
SiGe and Ge

Author: David Louis Harame

Publisher: The Electrochemical Society

Published: 2006

Total Pages: 1280

ISBN-13: 1566775078

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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Topological Disorder in Condensed Matter
Topological Disorder in Condensed Matter

Author: F. Yonezawa

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 262

ISBN-13: 3642821049

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This volume contains papers presented at the Fifth Taniguchi Symposium on the Theory of Condensed Matter, which was held between 2-5 November, 1982, at Shimoda, Japan. The topic of the Symposium was "Topological Disorder in Condensed Matter. " The objective of the Taniguchi Symposium is to encourage activity in those fields of research not in the limelight at the moment but regarded as very promising, such as our theme. Topological disorder refers to the dis order in the positions and connectivities of atoms in amorphous solids and liquids. The development of the physiCS of topologically disorderd systems, though extremely important fundamentally and for application purposes, falls far behind compared to that of other kinds of disorderd systems because the structure characterization of topologically disordered systems is still at a rather primitive stage. The structure characterization is the key to com prehensive understanding of physical properties of any material. Recently, several new attempts at structural analyses have been reported. Encouraged by this fact, our motivation in organizing the symposium was to investigate the possibilities of theoretical approaches to open a breakthrough in the present research situation on this subject. A rough sketch of the problem is made in the Introduction to give the readers a general outline of the subject. Part I is devoted to several at tempts to synthesize and characterize topological disorder more or less by analytical means.