Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology

Author: Tsunenobu Kimoto

Publisher: John Wiley & Sons

Published: 2014-09-23

Total Pages: 565

ISBN-13: 1118313550

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.


Silicon Carbide Microsystems for Harsh Environments

Silicon Carbide Microsystems for Harsh Environments

Author: Muthu Wijesundara

Publisher: Springer Science & Business Media

Published: 2011-05-17

Total Pages: 247

ISBN-13: 1441971211

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Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.


Advancing Silicon Carbide Electronics Technology II

Advancing Silicon Carbide Electronics Technology II

Author: Konstantinos Zekentes

Publisher: Materials Research Forum LLC

Published: 2020-03-15

Total Pages: 293

ISBN-13: 164490067X

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The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).


Microengineering Aerospace Systems

Microengineering Aerospace Systems

Author: Henry Helvajian

Publisher: AIAA

Published: 1999

Total Pages: 748

ISBN-13: 9781884989032

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Microengineering Aerospace Systems is a textbook tutorial encompassing MEMS (micro-electromechanical systems), nanoelectronics, packaging, processing, and materials characterization for developing miniaturized smart instruments for aerospace systems (i.e., ASIM application-specific integrated microinstrument), satellites, and satellite subsystems. Third in a series of Aerospace Press publications covering this rapidly advancing technology, this work presents fundamental aspects of the technology and specific aerospace systems applications through worked examples.


Amorphous and Crystalline Silicon Carbide II

Amorphous and Crystalline Silicon Carbide II

Author: Mahmud M. Rahman

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 238

ISBN-13: 3642750486

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This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.


Wide Band Gap Electronic Materials

Wide Band Gap Electronic Materials

Author: Mark A. Prelas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 523

ISBN-13: 9401101736

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Proceedings of the NATO Advanced Research Workshop on `Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994


Wide Bandgap Semiconductors for Power Electronics

Wide Bandgap Semiconductors for Power Electronics

Author: Peter Wellmann

Publisher: John Wiley & Sons

Published: 2022-01-10

Total Pages: 743

ISBN-13: 3527346716

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Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.


Advanced Silicon Carbide Devices and Processing

Advanced Silicon Carbide Devices and Processing

Author: Stephen Saddow

Publisher: BoD – Books on Demand

Published: 2015-09-17

Total Pages: 260

ISBN-13: 9535121685

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Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.


Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995

Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995

Author: Shin-ichi Nakashima

Publisher: CRC Press

Published: 1996

Total Pages: 1158

ISBN-13:

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The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.


Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Author: Toan Dinh

Publisher: Springer

Published: 2018-10-05

Total Pages: 122

ISBN-13: 9811325715

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This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.