Lepton Pair Production
Author: J. Thanh Van Tran
Publisher: Atlantica Séguier Frontières
Published: 1981
Total Pages: 400
ISBN-13: 9782863320082
DOWNLOAD EBOOKRead and Download eBook Full
Author: J. Thanh Van Tran
Publisher: Atlantica Séguier Frontières
Published: 1981
Total Pages: 400
ISBN-13: 9782863320082
DOWNLOAD EBOOKAuthor: John Collins
Publisher: Cambridge University Press
Published: 2011-04-28
Total Pages: 637
ISBN-13: 1139500627
DOWNLOAD EBOOKGiving an accurate account of the concepts, theorems and their justification, this book is a systematic treatment of perturbative QCD. It relates the concepts to experimental data, giving strong motivations for the methods. Ideal for graduate students starting their work in high-energy physics, it will also interest experienced researchers.
Author: R. K. Ellis
Publisher: Cambridge University Press
Published: 2003-12-04
Total Pages: 462
ISBN-13: 9780521545891
DOWNLOAD EBOOKA detailed overview of the physics of high-energy colliders emphasising the role of QCD.
Author: J. Thanh Van Tran
Publisher: Atlantica Séguier Frontières
Published: 1982
Total Pages: 712
ISBN-13: 9782863320174
DOWNLOAD EBOOKAuthor: J. AUDOUZE (Ed)
Publisher: Atlantica Séguier Frontières
Published: 1982
Total Pages: 414
ISBN-13: 9782863320150
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1976
Total Pages: 658
ISBN-13:
DOWNLOAD EBOOKAuthor: United States. Congress. House. Committee on Science and Technology. Subcommittee on Energy Development and Applications
Publisher:
Published: 1984
Total Pages: 660
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1978
Total Pages: 1190
ISBN-13:
DOWNLOAD EBOOKAuthor: I. V. Krivosheina
Publisher: Taylor & Francis
Published: 2000-12-01
Total Pages: 1236
ISBN-13: 9780750307314
DOWNLOAD EBOOKAddressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
Author:
Publisher:
Published: 1983
Total Pages: 432
ISBN-13:
DOWNLOAD EBOOK