Gettering and Defect Engineering in Semiconductor Technology '89
Author: Martin Kittler
Publisher: Scitec Publications
Published: 1989
Total Pages: 634
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author: Martin Kittler
Publisher: Scitec Publications
Published: 1989
Total Pages: 634
ISBN-13:
DOWNLOAD EBOOKAuthor: M. Kittler
Publisher: Trans Tech Publications Ltd
Published: 1989-01-01
Total Pages: 618
ISBN-13: 3035706441
DOWNLOAD EBOOKProceedings of the 3rd International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST '89) held at Garzau, GDR, October 1989
Author:
Publisher:
Published: 2005
Total Pages: 844
ISBN-13:
DOWNLOAD EBOOKAuthor: S. Ashok
Publisher:
Published: 1992
Total Pages: 1176
ISBN-13:
DOWNLOAD EBOOKProceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Author: H. Richter
Publisher:
Published: 2004
Total Pages: 718
ISBN-13:
DOWNLOAD EBOOKAuthor: Sergio Pizzini
Publisher: Scitec Publications
Published: 2002
Total Pages: 440
ISBN-13:
DOWNLOAD EBOOKModern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.
Author: Victor A. Perevostchikov
Publisher: Springer Science & Business Media
Published: 2005-09-15
Total Pages: 412
ISBN-13: 9783540262442
DOWNLOAD EBOOKGettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author: M. Suezawa
Publisher: Trans Tech Publications
Published: 1996
Total Pages: 608
ISBN-13:
DOWNLOAD EBOOKThe study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Author:
Publisher:
Published: 1989
Total Pages: 838
ISBN-13:
DOWNLOAD EBOOKAuthor: Peter Pichler
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 576
ISBN-13: 3709105978
DOWNLOAD EBOOKThis book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.