Ferroelectricity in Doped Hafnium Oxide
Ferroelectricity in Doped Hafnium Oxide

Author: Uwe Schroeder

Publisher: Woodhead Publishing

Published: 2019-03-27

Total Pages: 572

ISBN-13: 0081024312

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Ferroelectric Thin Films
Ferroelectric Thin Films

Author: Masanori Okuyama

Publisher: Springer Science & Business Media

Published: 2005-02-22

Total Pages: 272

ISBN-13: 9783540241638

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Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Ferroelectric-Gate Field Effect Transistor Memories
Ferroelectric-Gate Field Effect Transistor Memories

Author: Byung-Eun Park

Publisher: Springer Nature

Published: 2020-03-23

Total Pages: 421

ISBN-13: 9811512124

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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Lead-Free Piezoelectrics
Lead-Free Piezoelectrics

Author: Shashank Priya

Publisher: Springer Science & Business Media

Published: 2011-11-19

Total Pages: 521

ISBN-13: 1441995986

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Ecological restrictions in many parts of the world are demanding the elimination of Pb from all consumer items. At this moment in the piezoelectric ceramics industry, there is no issue of more importance than the transition to lead-free materials. The goal of Lead-Free Piezoelectrics is to provide a comprehensive overview of the fundamentals and developments in the field of lead-free materials and products to leading researchers in the world. The text presents chapters on demonstrated applications of the lead-free materials, which will allow readers to conceptualize the present possibilities and will be useful for both students and professionals conducting research on ferroelectrics, piezoelectrics, smart materials, lead-free materials, and a variety of applications including sensors, actuators, ultrasonic transducers and energy harvesters.

Pulsed Laser Deposition of Thin Films
Pulsed Laser Deposition of Thin Films

Author: Robert Eason

Publisher: John Wiley & Sons

Published: 2007-12-14

Total Pages: 754

ISBN-13: 0470052112

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Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.

Negative Capacitance in Ferroelectric Materials
Negative Capacitance in Ferroelectric Materials

Author: Michael Hoffmann

Publisher: BoD – Books on Demand

Published: 2020-09-15

Total Pages: 172

ISBN-13: 3751999361

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This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Ferroelectrics
Ferroelectrics

Author: Mickaël Lallart

Publisher: BoD – Books on Demand

Published: 2011-08-23

Total Pages: 266

ISBN-13: 9533074566

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Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.

Ferroelectric Random Access Memories
Ferroelectric Random Access Memories

Author: Hiroshi Ishiwara

Publisher: Springer Science & Business Media

Published: 2004-04-16

Total Pages: 316

ISBN-13: 9783540407188

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The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Chemically Deposited Nanocrystalline Metal Oxide Thin Films
Chemically Deposited Nanocrystalline Metal Oxide Thin Films

Author: Fabian I. Ezema

Publisher: Springer Nature

Published: 2021-06-26

Total Pages: 926

ISBN-13: 3030684628

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This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.