Defects and Transport in Oxides
Defects and Transport in Oxides

Author: Robert Jaffee

Publisher: Springer Science & Business Media

Published: 2013-11-21

Total Pages: 598

ISBN-13: 1461587239

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DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.

The Defect Chemistry of Metal Oxides
The Defect Chemistry of Metal Oxides

Author: Donald Morgan Smyth

Publisher: Oxford University Press on Demand

Published: 2000

Total Pages: 294

ISBN-13: 9780195110142

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The Defect Chemistry of Metal Oxides is a unique introduction to the equilibrium chemistry of solid inorganic compounds with a focus on metal oxides. Accessible to students with little or no background in defect chemistry, it explains how to apply basic principles and interpret the related behavior of materials. Topics discussed include lattice and electronic defects, doping effects, nonstoichiometry, and mass and charge transport. The text distinctly emphasizes the correlation between the general chemical properties of the constituent elements and the defect chemistry and transport properties of their compounds. It covers the types of defects formed, the effects of dopants, the amount and direction of nonstoichiometry, the depths of acceptor and donor levels, and more. Concluding chapters present up-to-date and detailed analyses of three systems: titanium dioxide, cobalt oxide and nickel oxide, and barium titanate. The Defect Chemistry of Metal Oxides is the only book of its kind that incorporates sample problems for students to solve. Suitable for a variety of courses in materials science and engineering, chemistry, and geochemistry, it also serves as a valuable reference for researchers and instructors.

Nonstoichiometric Oxides
Nonstoichiometric Oxides

Author: O.T. Soerensen

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 454

ISBN-13: 0323149804

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Nonstoichiometric Oxides discusses the thermodynamic and structural studies of nonstoichiometric oxides. This eight-chapter text also covers the defect-defect interactions in these compounds. The introductory chapters describe the thermodynamic properties of nonstoichiometric oxides in terms of defect complexes using the classical thermodynamic principles and from a statistical thermodynamics point of view. These chapters also include statistical thermodynamic models that indicate the ordered nonstoichiometric phase range in these oxides. The subsequent chapters examine the transport properties, such as diffusion and electrical conductivity. Diffusion theories and experimental diffusion coefficients for several systems, as well as the electrical properties of the highly defective ionic and mixed oxide conductor, are specifically tackled in these chapters. The concluding chapters present the pertinent results obtained in nonstoichiometric oxide structural studies using high-resolution electron microscopy and X-ray and neutron diffraction. Inorganic chemists and inorganic chemistry teachers and students will greatly appreciate this book.

Oxide Surfaces
Oxide Surfaces

Author:

Publisher: Elsevier

Published: 2001-05-21

Total Pages: 677

ISBN-13: 0080538312

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The book is a multi-author survey (in 15 chapters) of the current state of knowledge and recent developments in our understanding of oxide surfaces. The author list includes most of the acknowledged world experts in this field. The material covered includes fundamental theory and experimental studies of the geometrical, vibrational and electronic structure of such surfaces, but with a special emphasis on the chemical properties and associated reactivity. The main focus is on metal oxides but coverage extends from 'simple' rocksalt materials such as MgO through to complex transition metal oxides with different valencies.

Charged Semiconductor Defects
Charged Semiconductor Defects

Author: Edmund G. Seebauer

Publisher: Springer Science & Business Media

Published: 2008-11-14

Total Pages: 304

ISBN-13: 1848820593

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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides
Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides

Author: Andrzej Stokłosa

Publisher: CRC Press

Published: 2021-04-08

Total Pages: 319

ISBN-13: 100035282X

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Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides presents diagrams and numerical data of important properties of spinels and oxides based on experimental results published in the literature. The values of many parameters presented can be used for optimization of preparation of new systems, to predict the practical properties of these systems. Applications include electronic devices, new metallic alloys with improved corrosion resistance, new ceramic materials, and novel catalysts, particularly for oxygen evolution and reduction reactions. Organized into four comprehensive parts, the authors present the problem of the structure and concentration of ionic and electronic defects in magnetite and hausmannite, pure and doped with M3+ cations, and in spinels exhibiting magnetic properties and high electric conductance. Additional Features include: Includes 236 figures presenting equilibrium diagrams of point defects and other useful details related to stoichiometric and nonstoichiometric spinels and oxides. Details novel methods of calculation of equilibria involving point defects. Collects scattered data published in nearly 500 original articles since the 1950s on spinels and oxides in one useful volume. Building upon the data presented, this book is an indispensable reference for material scientists and engineers developing new metal or oxide-based systems can easily calculate other useful parameters and compare the properties of different materials to select the best candidates for an intended use.

Defects in Solids
Defects in Solids

Author: Richard J. D. Tilley

Publisher: John Wiley & Sons

Published: 2008-10-10

Total Pages: 549

ISBN-13: 047038073X

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Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.