Computer Simulations of Dislocations
Computer Simulations of Dislocations

Author: Vasily Bulatov

Publisher: Oxford University Press

Published: 2006-11-02

Total Pages: 301

ISBN-13: 0198526148

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The book presents a variety of methods for computer simulations of crystal defects in the form of "numerical recipes", complete with computer codes and analysis tools. By working through numerous case studies and problems, this book provides a useful starter kit for further method development in the computational materials sciences.

Dislocations, Mesoscale Simulations and Plastic Flow
Dislocations, Mesoscale Simulations and Plastic Flow

Author: Ladislas Kubin

Publisher: OUP Oxford

Published: 2013-04-18

Total Pages: 320

ISBN-13: 0191664545

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In the past twenty years, new experimental approaches, improved models and progress in simulation techniques brought new insights into long-standing issues concerning dislocation-based plasticity in crystalline materials. During this period, three-dimensional dislocation dynamics simulations appeared and reached maturity. Their objectives are to unravel the relation between individual and collective dislocation processes at the mesoscale, to establish connections with atom-scale studies of dislocation core properties and to bridge, in combination with modelling, the gap between defect properties and phenomenological continuum models for plastic flow. Dislocation dynamics simulations are becoming accessible to a wide range of users. This book presents to students and researchers in materials science and mechanical engineering a comprehensive coverage of the physical body of knowledge on which they are based. It includes classical studies, which are too often ignored, recent experimental and theoretical advances, as well as a discussion of selected applications on various topics.

Computer Simulations of Dislocations
Computer Simulations of Dislocations

Author: Vasily Bulatov

Publisher: OUP Oxford

Published: 2006-11-02

Total Pages: 300

ISBN-13: 0191513660

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This book presents a broad collection of models and computational methods - from atomistic to continuum - applied to crystal dislocations. Its purpose is to help students and researchers in computational materials sciences to acquire practical knowledge of relevant simulation methods. Because their behavior spans multiple length and time scales, crystal dislocations present a common ground for an in-depth discussion of a variety of computational approaches, including their relative strengths, weaknesses and inter-connections. The details of the covered methods are presented in the form of "numerical recipes" and illustrated by case studies. A suite of simulation codes and data files is made available on the book's website to help the reader "to learn-by-doing" through solving the exercise problems offered in the book.

Imperfections in Crystalline Solids
Imperfections in Crystalline Solids

Author: Wei Cai

Publisher: Cambridge University Press

Published: 2016-09-15

Total Pages: 535

ISBN-13: 1316571718

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This textbook provides students with a complete working knowledge of the properties of imperfections in crystalline solids. Readers will learn how to apply the fundamental principles of mechanics and thermodynamics to defect properties in materials science, gaining all the knowledge and tools needed to put this into practice in their own research. Beginning with an introduction to defects and a brief review of basic elasticity theory and statistical thermodynamics, the authors go on to guide the reader in a step-by-step way through point, line, and planar defects, with an emphasis on their structural, thermodynamic, and kinetic properties. Numerous end-of-chapter exercises enable students to put their knowledge into practice, and with solutions for instructors and MATLAB® programs available online, this is an essential text for advanced undergraduate and introductory graduate courses in crystal defects, as well as being ideal for self-study.

Fundamental Aspects of Dislocation Interactions
Fundamental Aspects of Dislocation Interactions

Author: G. Kostorz

Publisher: Elsevier

Published: 2013-09-03

Total Pages: 471

ISBN-13: 1483274926

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Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III covers the papers presented at a European Research Conference on Plasticity of Materials-Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III, held on August 30-September 4, 1992 in Ascona, Switzerland. The book focuses on the processes, technologies, reactions, transformations, and approaches involved in dislocation interactions. The selection first offers information on work softening and Hall-Petch hardening in extruded mechanically alloyed alloys and dynamic origin of dislocation structures in deformed solids. Discussions focus on stress-strain behavior in relation to composition, structure, and annealing; comparison of stress-strain curves with work softening theory; sweeping and trapping mechanism; and model of dipolar wall structure formation. The text then ponders on plastic instabilities and their relation to fracture and dislocation and kink dynamics in f.c.c. metals studied by mechanical spectroscopy. The book takes a look at misfit dislocation generation mechanisms in heterostructures and evolution of dislocation structure on the interfaces associated with diffusionless phase transitions. Discussions focus on dislocation representation of a wall of elastic domains; equation of equilibrium of an elastic domain; transformation of dislocations; and theoretical and experimental background. The selection is a valuable reference for readers interested in dislocation interactions.

Crystal Plasticity Finite Element Methods
Crystal Plasticity Finite Element Methods

Author: Franz Roters

Publisher: John Wiley & Sons

Published: 2011-08-04

Total Pages: 188

ISBN-13: 3527642099

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Written by the leading experts in computational materials science, this handy reference concisely reviews the most important aspects of plasticity modeling: constitutive laws, phase transformations, texture methods, continuum approaches and damage mechanisms. As a result, it provides the knowledge needed to avoid failures in critical systems udner mechanical load. With its various application examples to micro- and macrostructure mechanics, this is an invaluable resource for mechanical engineers as well as for researchers wanting to improve on this method and extend its outreach.

Generalized Continua and Dislocation Theory
Generalized Continua and Dislocation Theory

Author: Carlo Sansour

Publisher: Springer Science & Business Media

Published: 2012-05-27

Total Pages: 323

ISBN-13: 3709112222

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Defects, dislocations and the general theory.- Approaches to generalized continua.- Generalized continuum modelling of crystal plasticity.- Introduction to discrete dislocation dynamics. The book contains four lectures on generalized continua and dislocation theory, reflecting the treatment of the subject at different scales. G. Maugin provides a continuum formulation of defects at the heart of which lies the notion of the material configuration and the material driving forces of in-homogeneities such as dislocations, disclinations, point defects, cracks, phase-transition fronts and shock waves. C. Sansour and S. Skatulla start with a compact treatment of linear transformation groups with subsequent excursion into the continuum theory of generalized continua. After a critical assessment a unified framework of the same is presented. The next contribution by S. Forest gives an account on generalized crystal plasticity. Finally, H. Zbib provides an account of dislocation dynamics and illustrates its fundamental importance at the smallest scale. In three contributions extensive computational results of many examples are presented.

Simulations for Solid State Physics Paperback Without CD-ROM
Simulations for Solid State Physics Paperback Without CD-ROM

Author: Robert H. Silsbee

Publisher: Cambridge University Press

Published: 1997-06-28

Total Pages: 372

ISBN-13: 9780521599115

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Interactive resource centering around fourteen high quality computer simulations covering essential topics in solid state physics. Copyright © Libri GmbH. All rights reserved.

Numerical Simulation in Molecular Dynamics
Numerical Simulation in Molecular Dynamics

Author: Michael Griebel

Publisher: Springer Science & Business Media

Published: 2007-08-16

Total Pages: 472

ISBN-13: 3540680950

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This book details the necessary numerical methods, the theoretical background and foundations and the techniques involved in creating computer particle models, including linked-cell method, SPME-method, tree codes, amd multipol technique. It illustrates modeling, discretization, algorithms and their parallel implementation with MPI on computer systems with distributed memory. The text offers step-by-step explanations of numerical simulation, providing illustrative code examples. With the description of the algorithms and the presentation of the results of various simulations from fields such as material science, nanotechnology, biochemistry and astrophysics, the reader of this book will learn how to write programs capable of running successful experiments for molecular dynamics.

C,H,N and O in Si and Characterization and Simulation of Materials and Processes
C,H,N and O in Si and Characterization and Simulation of Materials and Processes

Author: A. Borghesi

Publisher: North Holland

Published: 1996

Total Pages: 624

ISBN-13:

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.