CMOS and Beyond

CMOS and Beyond

Author: Tsu-Jae King Liu

Publisher: Cambridge University Press

Published: 2015-02-05

Total Pages: 439

ISBN-13: 1107043182

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Get up to speed with the future of logic switch design with this indispensable introduction to post-CMOS technologies.


CMOS Biomicrosystems

CMOS Biomicrosystems

Author: Krzysztof Iniewski

Publisher: John Wiley & Sons

Published: 2011-10-14

Total Pages: 425

ISBN-13: 1118016483

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The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum.


Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Author: Guilei Wang

Publisher: Springer Nature

Published: 2019-09-20

Total Pages: 127

ISBN-13: 9811500460

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This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.


Beyond-CMOS

Beyond-CMOS

Author: Alessandro Cresti

Publisher: John Wiley & Sons

Published: 2023-08-29

Total Pages: 453

ISBN-13: 1789451272

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Handbook of Digital CMOS Technology, Circuits, and Systems

Handbook of Digital CMOS Technology, Circuits, and Systems

Author: Karim Abbas

Publisher: Springer Nature

Published: 2020-01-14

Total Pages: 653

ISBN-13: 3030371956

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This book provides a comprehensive reference for everything that has to do with digital circuits. The author focuses equally on all levels of abstraction. He tells a bottom-up story from the physics level to the finished product level. The aim is to provide a full account of the experience of designing, fabricating, understanding, and testing a microchip. The content is structured to be very accessible and self-contained, allowing readers with diverse backgrounds to read as much or as little of the book as needed. Beyond a basic foundation of mathematics and physics, the book makes no assumptions about prior knowledge. This allows someone new to the field to read the book from the beginning. It also means that someone using the book as a reference will be able to answer their questions without referring to any external sources.


CMOS IC Layout

CMOS IC Layout

Author: Dan Clein

Publisher: Elsevier

Published: 1999-01-07

Total Pages: 287

ISBN-13: 0080502113

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This book includes basic methodologies, review of basic electrical rules and how they apply, design rules, IC planning, detailed checklists for design review, specific layout design flows, specialized block design, interconnect design, and also additional information on design limitations due to production requirements.*Practical, hands-on approach to CMOS layout theory and design*Offers engineers and technicians the training materials they need to stay current in circuit design technology.*Covers manufacturing processes and their effect on layout and design decisions


Tradeoffs and Optimization in Analog CMOS Design

Tradeoffs and Optimization in Analog CMOS Design

Author: David Binkley

Publisher: John Wiley & Sons

Published: 2008-09-15

Total Pages: 632

ISBN-13: 047003369X

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Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.


CMOS

CMOS

Author: R. Jacob Baker

Publisher: John Wiley & Sons

Published: 2008

Total Pages: 1074

ISBN-13: 0470229411

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This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.