Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Epitaxy is relevant for thin film growth and is a very active area of theoretical research since several years. Recently powerful numerical techniques have been used to link atomistic effects at the film's surface to its macroscopic morphology. This book also serves as an introduction into this highly active interdisciplinary field of research for applied mathematicians, theoretical physicists and computational materials scientists.
This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 Am and 1.55 Am."
'The book is well organized and is pedagogical. By discussing crystallization in pure systems, the author introduces and describes the important concepts, physical parameters and theoretical models pertaining to nucleation and growth of crystals … If you are a young investigator or a graduate student whose research involves understanding the fundamentals of crystallization including nucleation and growth, this book will be a treat for you. Readers who have a strong background in physical chemistry or thermal physics may find the book easy to read. Nevertheless, this book should be a good reference to have on the bookshelf if you are an experienced researcher whose interest crosses the path with the general topics of crystal growth.'Acta Crystallographica Section BThe processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy.This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject.Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics.
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Ehrlich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.
