Model Reduction for Circuit Simulation
Model Reduction for Circuit Simulation

Author: Peter Benner

Publisher: Springer Science & Business Media

Published: 2011-03-25

Total Pages: 317

ISBN-13: 940070089X

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Simulation based on mathematical models plays a major role in computer aided design of integrated circuits (ICs). Decreasing structure sizes, increasing packing densities and driving frequencies require the use of refined mathematical models, and to take into account secondary, parasitic effects. This leads to very high dimensional problems which nowadays require simulation times too large for the short time-to-market demands in industry. Modern Model Order Reduction (MOR) techniques present a way out of this dilemma in providing surrogate models which keep the main characteristics of the device while requiring a significantly lower simulation time than the full model. With Model Reduction for Circuit Simulation we survey the state of the art in the challenging research field of MOR for ICs, and also address its future research directions. Special emphasis is taken on aspects stemming from miniturisations to the nano scale. Contributions cover complexity reduction using e.g., balanced truncation, Krylov-techniques or POD approaches. For semiconductor applications a focus is on generalising current techniques to differential-algebraic equations, on including design parameters, on preserving stability, and on including nonlinearity by means of piecewise linearisations along solution trajectories (TPWL) and interpolation techniques for nonlinear parts. Furthermore the influence of interconnects and power grids on the physical properties of the device is considered, and also top-down system design approaches in which detailed block descriptions are combined with behavioral models. Further topics consider MOR and the combination of approaches from optimisation and statistics, and the inclusion of PDE models with emphasis on MOR for the resulting partial differential algebraic systems. The methods which currently are being developed have also relevance in other application areas such as mechanical multibody systems, and systems arising in chemistry and to biology. The current number of books in the area of MOR for ICs is very limited, so that this volume helps to fill a gap in providing the state of the art material, and to stimulate further research in this area of MOR. Model Reduction for Circuit Simulation also reflects and documents the vivid interaction between three active research projects in this area, namely the EU-Marie Curie Action ToK project O-MOORE-NICE (members in Belgium, The Netherlands and Germany), the EU-Marie Curie Action RTN-project COMSON (members in The Netherlands, Italy, Germany, and Romania), and the German federal project System reduction in nano-electronics (SyreNe).

Advanced Model Order Reduction Techniques in VLSI Design
Advanced Model Order Reduction Techniques in VLSI Design

Author: Sheldon Tan

Publisher: Cambridge University Press

Published: 2007-05-31

Total Pages: 259

ISBN-13: 1139464310

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Model order reduction (MOR) techniques reduce the complexity of VLSI designs, paving the way to higher operating speeds and smaller feature sizes. This book presents a systematic introduction to, and treatment of, the key MOR methods employed in general linear circuits, using real-world examples to illustrate the advantages and disadvantages of each algorithm. Following a review of traditional projection-based techniques, coverage progresses to more advanced MOR methods for VLSI design, including HMOR, passive truncated balanced realization (TBR) methods, efficient inductance modeling via the VPEC model, and structure-preserving MOR techniques. Where possible, numerical methods are approached from the CAD engineer's perspective, avoiding complex mathematics and allowing the reader to take on real design problems and develop more effective tools. With practical examples and over 100 illustrations, this book is suitable for researchers and graduate students of electrical and computer engineering, as well as practitioners working in the VLSI design industry.

Thermal Testing of Integrated Circuits
Thermal Testing of Integrated Circuits

Author: J. Altet

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 212

ISBN-13: 1475736355

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Temperature has been always considered as an appreciable magnitude to detect failures in electric systems. In this book, the authors present the feasibility of considering temperature as an observable for testing purposes, with full coverage of the state of the art.

Electrical-thermal Modeling and Simulation for Three-dimensional Integrated Systems
Electrical-thermal Modeling and Simulation for Three-dimensional Integrated Systems

Author: Jianyong Xie

Publisher:

Published: 2013

Total Pages:

ISBN-13:

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The continuous miniaturization of electronic systems using the three-dimensional (3D) integration technique has brought in new challenges for the computer-aided design and modeling of 3D integrated circuits (ICs) and systems. The major challenges for the modeling and analysis of 3D integrated systems mainly stem from four aspects: (a) the interaction between the electrical and thermal domains in an integrated system, (b) the increasing modeling complexity arising from 3D systems requires the development of multiscale techniques for the modeling and analysis of DC voltage drop, thermal gradients, and electromagnetic behaviors, (c) efficient modeling of microfluidic cooling, and (d) the demand of performing fast thermal simulation with varying design parameters. Addressing these challenges for the electrical/thermal modeling and analysis of 3D systems necessitates the development of novel numerical modeling methods. This dissertation mainly focuses on developing efficient electrical and thermal numerical modeling and co-simulation methods for 3D integrated systems. The developed numerical methods can be classified into three categories. The first category aims to investigate the interaction between electrical and thermal characteristics for power delivery networks (PDNs) in steady state and the thermal effect on characteristics of through-silicon via (TSV) arrays at high frequencies. The steady-state electrical-thermal interaction for PDNs is addressed by developing a voltage drop-thermal co-simulation method while the thermal effect on TSV characteristics is studied by proposing a thermal-electrical analysis approach for TSV arrays. The second category of numerical methods focuses on developing multiscale modeling approaches for the voltage drop and thermal analysis. A multiscale modeling method based on the finite-element non-conformal domain decomposition technique has been developed for the voltage drop and thermal analysis of 3D systems. The proposed method allows the modeling of a 3D multiscale system using independent mesh grids in sub-domains. As a result, the system unknowns can be greatly reduced. In addition, to improve the simulation efficiency, the cascadic multigrid solving approach has been adopted for the voltage drop-thermal co-simulation with a large number of unknowns. The focus of the last category is to develop fast thermal simulation methods using compact models and model order reduction (MOR). To overcome the computational cost using the computational fluid dynamics simulation, a finite-volume compact thermal model has been developed for the microchannel-based fluidic cooling. This compact thermal model enables the fast thermal simulation of 3D ICs with a large number of microchannels for early-stage design. In addition, a system-level thermal modeling method using domain decomposition and model order reduction is developed for both the steady-state and transient thermal analysis. The proposed approach can efficiently support thermal modeling with varying design parameters without using parameterized MOR techniques.

Charge-Based MOS Transistor Modeling
Charge-Based MOS Transistor Modeling

Author: Christian C. Enz

Publisher: John Wiley & Sons

Published: 2006-08-14

Total Pages: 328

ISBN-13: 0470855452

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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Electrical Modeling and Design for 3D System Integration
Electrical Modeling and Design for 3D System Integration

Author: Er-Ping Li

Publisher: John Wiley & Sons

Published: 2012-04-10

Total Pages: 394

ISBN-13: 0470623462

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New advanced modeling methods for simulating the electromagnetic properties of complex three-dimensional electronic systems Based on the author's extensive research, this book sets forth tested and proven electromagnetic modeling and simulation methods for analyzing signal and power integrity as well as electromagnetic interference in large complex electronic interconnects, multilayered package structures, integrated circuits, and printed circuit boards. Readers will discover the state of the technology in electronic package integration and printed circuit board simulation and modeling. In addition to popular full-wave electromagnetic computational methods, the book presents new, more sophisticated modeling methods, offering readers the most advanced tools for analyzing and designing large complex electronic structures. Electrical Modeling and Design for 3D System Integration begins with a comprehensive review of current modeling and simulation methods for signal integrity, power integrity, and electromagnetic compatibility. Next, the book guides readers through: The macromodeling technique used in the electrical and electromagnetic modeling and simulation of complex interconnects in three-dimensional integrated systems The semi-analytical scattering matrix method based on the N-body scattering theory for modeling of three-dimensional electronic package and multilayered printed circuit boards with multiple vias Two- and three-dimensional integral equation methods for the analysis of power distribution networks in three-dimensional package integrations The physics-based algorithm for extracting the equivalent circuit of a complex power distribution network in three-dimensional integrated systems and printed circuit boards An equivalent circuit model of through-silicon vias Metal-oxide-semiconductor capacitance effects of through-silicon vias Engineers, researchers, and students can turn to this book for the latest techniques and methods for the electrical modeling and design of electronic packaging, three-dimensional electronic integration, integrated circuits, and printed circuit boards.