Simulation of Semiconductor Devices and Processes
Author: Siegfried Selberherr
Publisher: Springer
Published: 1993
Total Pages: 532
ISBN-13: 9780387825045
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Author: Siegfried Selberherr
Publisher: Springer
Published: 1993
Total Pages: 532
ISBN-13: 9780387825045
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Publisher: Business Center for Academic Societies
Published: 1993
Total Pages: 202
ISBN-13:
DOWNLOAD EBOOKAuthor: Franz Fasching
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 313
ISBN-13: 370919315X
DOWNLOAD EBOOKAs the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.
Author: G. R. Srinivasan
Publisher: The Electrochemical Society
Published: 1996
Total Pages: 546
ISBN-13: 9781566771542
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Published: 1995
Total Pages: 422
ISBN-13:
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Publisher:
Published: 1999
Total Pages: 1116
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DOWNLOAD EBOOKAuthor: Shigeyuki Ochi
Publisher: Taylor & Francis
Published: 2022-11-15
Total Pages: 204
ISBN-13: 1351461729
DOWNLOAD EBOOKThis title contains the most up-to-date and comprehensive information on the development of the Charge-Coupled Device (CCD), which makes possible the widespread use of consumer camcorders and broadcasting color cameras. It is comprehensive enough to be of great value to researchers, industrialists and post-graduate students in image technology.
Author: Brendan P. Walsh
Publisher: Wiley-Blackwell
Published: 1987
Total Pages: 400
ISBN-13:
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Publisher:
Published: 1996
Total Pages: 836
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DOWNLOAD EBOOKAuthor: Werner Wesch
Publisher: Springer
Published: 2016-07-14
Total Pages: 547
ISBN-13: 3319335618
DOWNLOAD EBOOKThis book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.