ULSI Process Integration III
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
Published: 2003
Total Pages: 620
ISBN-13: 9781566773768
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Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
Published: 2003
Total Pages: 620
ISBN-13: 9781566773768
DOWNLOAD EBOOKAuthor: C. Claeys
Publisher: The Electrochemical Society
Published: 2009-09
Total Pages: 547
ISBN-13: 1566777445
DOWNLOAD EBOOKULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Author: Cor L. Claeys
Publisher: The Electrochemical Society
Published: 2001
Total Pages: 636
ISBN-13: 9781566773089
DOWNLOAD EBOOKAuthor: C. Claeys
Publisher: The Electrochemical Society
Published: 2011
Total Pages: 429
ISBN-13: 1607682613
DOWNLOAD EBOOKAuthor: C. Claeys
Publisher: The Electrochemical Society
Published: 2015
Total Pages: 335
ISBN-13: 1607686759
DOWNLOAD EBOOKAuthor: Cor L. Claeys
Publisher: The Electrochemical Society
Published: 2007
Total Pages: 509
ISBN-13: 1566775728
DOWNLOAD EBOOKThe symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
Published: 2012-02-17
Total Pages: 616
ISBN-13: 1119966868
DOWNLOAD EBOOKFinding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author: Cor L. Claeys
Publisher: The Electrochemical Society
Published: 1999
Total Pages: 408
ISBN-13: 9781566772419
DOWNLOAD EBOOKAuthor: Chih-Hang Tung
Publisher: John Wiley & Sons
Published: 2003-10-06
Total Pages: 688
ISBN-13: 9780471457725
DOWNLOAD EBOOKMore than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Author: David Louis Harame
Publisher: The Electrochemical Society
Published: 2004
Total Pages: 1242
ISBN-13: 9781566774208
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