The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured
This book investigates the fundamental properties and response of materials in extreme environments such as static and dynamic high pressure, high strain and high strain-rates, high radiation and electromagnetic fields, high and low temperatures, corrosive conditions, environments causing embrittlement, and environments containing atomic oxygen. This is an extremely active and vibrant field of research, in particular because it is now possible to create laboratory conditions similar in pressure, temperature and radiation to those found in planetary interiors and in space. In addition, advanced simulation methods, coupled with high-performance computing platforms, now afford predictions - on a first-principles basis - of the properties of materials in extreme environments. Scientists from a broad spectrum of fields are represented, including space science, planetary science, high-pressure research, shock physics, ultrafast science, and energetic materials research.
For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density -Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured
This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Undoubtedly the applications of polymers are rapidly evolving. Technology is continually changing and quickly advancing as polymers are needed to solve a variety of day-to-day challenges leading to improvements in quality of life. The Encyclopedia of Polymer Applications presents state-of-the-art research and development on the applications of polymers. This groundbreaking work provides important overviews to help stimulate further advancements in all areas of polymers. This comprehensive multi-volume reference includes articles contributed from a diverse and global team of renowned researchers. It offers a broad-based perspective on a multitude of topics in a variety of applications, as well as detailed research information, figures, tables, illustrations, and references. The encyclopedia provides introductions, classifications, properties, selection, types, technologies, shelf-life, recycling, testing and applications for each of the entries where applicable. It features critical content for both novices and experts including, engineers, scientists (polymer scientists, materials scientists, biomedical engineers, macromolecular chemists), researchers, and students, as well as interested readers in academia, industry, and research institutions.