C, H, N and O in Si and Characterization and Simulation of Materials and Processes
C, H, N and O in Si and Characterization and Simulation of Materials and Processes

Author: A. Borghesi

Publisher: Newnes

Published: 2012-12-02

Total Pages: 580

ISBN-13: 044459633X

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI
Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Author: Golla Eranna

Publisher: CRC Press

Published: 2014-12-08

Total Pages: 432

ISBN-13: 1040055850

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Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical

Istc/cstic 2009 (cistc)
Istc/cstic 2009 (cistc)

Author: David Huang

Publisher: The Electrochemical Society

Published: 2009-03

Total Pages: 1124

ISBN-13: 1566777038

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ISTC/CSTIC is an annual semiconductor technology conference covering all the aspects of semiconductor technology and manufacturing, including devices, design, lithography, integration, materials, processes, manufacturing as well as emerging semiconductor technologies and silicon material applications. ISTC/CSTIC 2009 was merged by ISTC (International Semiconductor Technology Conference) and CSTIC (China Semiconductor Technology International Conference), the two industry leading technical conferences in China, and consisted of one plenary session and nine technical symposia. This issue of ECS Transactions contains 159 papers from the conference.

The Formation of Structural Imperfections in Semiconductor Silicon
The Formation of Structural Imperfections in Semiconductor Silicon

Author: V. I. Talanin

Publisher: Cambridge Scholars Publishing

Published: 2018-12-14

Total Pages: 281

ISBN-13: 152752342X

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Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.