Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics in the same style and in the same notation Most up to date developments in semiconductor physics and nano-engineering Mathematical derivations are carried through in detail with emphasis on clarity Timely application areas such as biophotonics , bioelectronics
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.
LED Lighting is a self-contained and introductory-level book featuring a blend of theory and applications that thoroughly covers this important interdisciplinary area. Building on the underlying fields of optics, photonics, and vision science, it comprises four parts. PART I is devoted to fundamentals. The behavior of light is described in terms of rays, waves, and photons. Each of these approaches is best suited to a particular set of applications. The properties of blackbody radiation, thermal light, and incandescent light are derived and explained. The essentials of semiconductor physics are set forth, including the operation of junctions and heterojunctions, quantum wells and quantum dots, and organic and perovskite semiconductors. PART II deals with the generation of light in semiconductors, and details the operation and properties of III-V semiconductor devices (MQWLEDs and μLEDs), quantum-dot devices (QLEDs & WOLEDs), organic semiconductor devices (OLEDs, SMOLEDs, PLEDs, & WOLEDs), and perovskite devices (PeLEDs, PPeLEDs, QPeLEDs, & PeWLEDs). PART III focuses on vision and the perception of color, as well as on colorimetry. It delineates radiometric and photometric quantities as well as efficacy and efficiency measures. It relays the significance of metrics often encountered in LED lighting, including the color rendering index (CRI), color temperature (CT), correlated color temperature (CCT), and chromaticity diagram. PART IV is devoted to LED lighting, focusing on its history and salutary features, and on how this modern form of illumination is deployed. It describes the principal components used in LED lighting, including white phosphor-conversion LEDs, chip-on-board (COB) devices, color-mixing LEDs, hybrid devices, LED filaments, retrofit LED lamps, LED luminaires, and OLED light panels. It concludes with a discussion of smart lighting and connected lighting. Each chapter contains highlighted equations, color-coded figures, practical examples, and reading lists.
Handbook of Optoelectronics offers a self-contained reference from the basic science and light sources to devices and modern applications across the entire spectrum of disciplines utilizing optoelectronic technologies. This second edition gives a complete update of the original work with a focus on systems and applications. Volume I covers the details of optoelectronic devices and techniques including semiconductor lasers, optical detectors and receivers, optical fiber devices, modulators, amplifiers, integrated optics, LEDs, and engineered optical materials with brand new chapters on silicon photonics, nanophotonics, and graphene optoelectronics. Volume II addresses the underlying system technologies enabling state-of-the-art communications, imaging, displays, sensing, data processing, energy conversion, and actuation. Volume III is brand new to this edition, focusing on applications in infrastructure, transport, security, surveillance, environmental monitoring, military, industrial, oil and gas, energy generation and distribution, medicine, and free space. No other resource in the field comes close to its breadth and depth, with contributions from leading industrial and academic institutions around the world. Whether used as a reference, research tool, or broad-based introduction to the field, the Handbook offers everything you need to get started. (The previous edition of this title was published as Handbook of Optoelectronics, 9780750306461.) John P. Dakin, PhD, is professor (emeritus) at the Optoelectronics Research Centre, University of Southampton, UK. Robert G. W. Brown, PhD, is chief executive officer of the American Institute of Physics and an adjunct full professor in the Beckman Laser Institute and Medical Clinic at the University of California, Irvine.
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
