The Investigation of Growth Parameters and Characterization of Dilute Nitride Semiconductors
Author: Sheng Chao
Publisher:
Published: 2010
Total Pages: 0
ISBN-13:
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Dilute Nitride Semiconductors
Author: Mohamed Henini
Publisher: Elsevier
Published: 2004-12-15
Total Pages: 648
ISBN-13: 0080455999
DOWNLOAD EBOOKThis book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Dilute III-V Nitride Semiconductors and Material Systems
Author: Ayse Erol
Publisher: Springer Science & Business Media
Published: 2008-01-12
Total Pages: 607
ISBN-13: 3540745297
DOWNLOAD EBOOKThis book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Dilute III-V Nitride Semiconductors and Material Systems
Author: Ayse Erol
Publisher: Springer
Published: 2009-09-02
Total Pages: 592
ISBN-13: 9783540842996
DOWNLOAD EBOOKThis book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
III-nitride
Author: Zhe Chuan Feng
Publisher: Imperial College Press
Published: 2006
Total Pages: 442
ISBN-13: 1860949037
DOWNLOAD EBOOKIII-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Nitrides and Dilute Nitrides
Author: Javier Miguel-Sánchez
Publisher:
Published: 2007-01-01
Total Pages: 405
ISBN-13: 9788178952505
DOWNLOAD EBOOKSince the early developments of the last century, a lot of investigations and works have been devoted to the study of the science and technology of semiconductors. Although silicon and germanium were the pioneering semiconductors, in the last years, the so called III-V semiconductors [(B,Al,Ga,In)(P,As,Sb)] attracted a lot of attention for their interesting properties (high mobility, direct transitions, ...) which yielded to the successful development of high speed electronic devices and light emitting and laser diodes. Current telecom applications are mainly based in these semiconductor devices (mobile phones, VCSELs in fibre optic applications, etc.). But in the last decades, the incorporation of the small and highly electronegative nitrogen atom in the 'old' III-V semiconductors has opened a new and interesting field in semiconductor physics and applications: Nitrides (III-N) and dilute nitrides (III-V-N) are nowadays the main candidates for the development of devices with improved characteristics: laser diodes in the wavelengths of interest for telecom applications, in the visible and UV range, high electron mobility transistors, white LED for automotive, home and airplane illumination with much lower heat dissipation than bulb-based illumination, high temperature applications, ... This book is devoted to a detailed compilation of comprehensive reviews of the main topics under investigation in the field of nitride and dilute nitrides, written by the pioneers and researchers from the leading research labs from all over the world, describing the properties of these semiconductors: From the ab initio theory to the growth (MOCVD, MBE) and characterization (magnetic, electric, structural) of the materials and the devices.
Nitride Semiconductors
Author: Pierre Ruterana
Publisher: John Wiley & Sons
Published: 2006-05-12
Total Pages: 686
ISBN-13: 3527607404
DOWNLOAD EBOOKSemiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Nitride Semiconductors: Volume 482
Author: Materials Research Society. Meeting
Publisher:
Published: 1998-04-20
Total Pages: 1274
ISBN-13:
DOWNLOAD EBOOKThis book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
Nitride Semiconductors - Bulk and Related Growth and Characterization
Author: Y. Mori
Publisher:
Published: 2013
Total Pages:
ISBN-13: 9781510803367
DOWNLOAD EBOOKHandbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth
Author: Hadis Morkoç
Publisher: John Wiley & Sons
Published: 2009-07-30
Total Pages: 1311
ISBN-13: 3527628460
DOWNLOAD EBOOKThe three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
