AFOSR.

AFOSR.

Author: United States. Air Force. Office of Scientific Research

Publisher:

Published: 1959

Total Pages: 718

ISBN-13:

DOWNLOAD EBOOK


Optical Properties and Applications of Semiconductors

Optical Properties and Applications of Semiconductors

Author: Inamuddin

Publisher: CRC Press

Published: 2022-07-18

Total Pages: 186

ISBN-13: 1000598950

DOWNLOAD EBOOK

Semiconductors with optical characteristics have found widespread use in evolving semiconductor photovoltaics, where optical features are important. The industrialization of semiconductors and their allied applications have paved the way for optical measurement techniques to be used in new ways. Due to their unique properties, semiconductors are key components in the daily employed technologies in healthcare, computing, communications, green energy, and a range of other uses. This book examines the fundamental optical properties and applications of semiconductors. It summarizes the information as well as the optical characteristics and applicability of semiconductors through an in-depth review of the literature. Accomplished experts in the field share their knowledge and examine new developments. FEATURES Comprehensive coverage of all types of optical applications using semiconductors Explores relevant composite materials and devices for each application Addresses the optical properties of crystalline and amorphous semiconductors Describes new developments in the field and future potential applications Optical Properties and Applications of Semiconductors is a comprehensive reference and an invaluable resource for engineers, scientists, academics, and industry R&D teams working in applied physics.


Photoconductive Behavior of Lead Sulfide Films

Photoconductive Behavior of Lead Sulfide Films

Author: Donald K. Smith

Publisher:

Published: 1971

Total Pages: 180

ISBN-13:

DOWNLOAD EBOOK

The structure, chemical composition, and photoelectronic properties of chemically deposited PbS films have been investigated in relationship to variation in the concentration of oxidant used in the deposition. Structure and photoelectronic properties in the PbS film change as the concentration of oxidant is varied. Concomitant variations in the average chemical composition of the films are minor. It was found that the dependence of carrier density and mobility on temperature is divided into low and high temperature regions with distinct activation energies. The principal effect of photoexcitation is to increase the carrier density. Films produced without the use of oxidants are relatively insensitive. The primary electronic properties of PbS films may be described in terms of sensitizing centers located 0.23 eV below the conduction band, and in terms of intergrain barriers which limit the effective mobility. The intergrain barriers play no essential role in the photoconductive process. PbS films deposited from baths containing no oxidant lack the sensitizing centers.