Early Stages of Oxygen Precipitation in Silicon
Early Stages of Oxygen Precipitation in Silicon

Author: R. Jones

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 535

ISBN-13: 9400903553

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It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Oxygen in Silicon
Oxygen in Silicon

Author:

Publisher: Academic Press

Published: 1994-08-15

Total Pages: 711

ISBN-13: 0080864392

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This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings

Handbook of Silicon Based MEMS Materials and Technologies
Handbook of Silicon Based MEMS Materials and Technologies

Author: Markku Tilli

Publisher: Elsevier

Published: 2009-12-08

Total Pages: 670

ISBN-13: 0815519885

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A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: Silicon as MEMS material Material properties and measurement techniques Analytical methods used in materials characterization Modeling in MEMS Measuring MEMS Micromachining technologies in MEMS Encapsulation of MEMS components Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author: Peter Pichler

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 576

ISBN-13: 3709105978

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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)
Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)

Author: E M Anastassakis

Publisher: World Scientific

Published: 1990-11-29

Total Pages: 2768

ISBN-13: 9814583634

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Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

Springer Handbook of Crystal Growth
Springer Handbook of Crystal Growth

Author: Govindhan Dhanaraj

Publisher: Springer Science & Business Media

Published: 2010-10-20

Total Pages: 1823

ISBN-13: 3540747613

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Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.