BuDocks Technical Digest
Author:
Publisher:
Published: 1951
Total Pages: 476
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author:
Publisher:
Published: 1951
Total Pages: 476
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1957
Total Pages: 374
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1991
Total Pages: 16
ISBN-13:
DOWNLOAD EBOOKAuthor: G. W. Day
Publisher:
Published: 1990
Total Pages: 218
ISBN-13:
DOWNLOAD EBOOKAuthor: Howard Huff
Publisher: Springer Science & Business Media
Published: 2005
Total Pages: 740
ISBN-13: 9783540210818
DOWNLOAD EBOOKIssues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author: Michael S. Shur
Publisher: Springer Science & Business Media
Published: 2013-11-21
Total Pages: 677
ISBN-13: 1489919899
DOWNLOAD EBOOKGaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author:
Publisher: The Electrochemical Society
Published: 2004
Total Pages: 508
ISBN-13: 9781566774178
DOWNLOAD EBOOKAuthor: Samar K. Saha
Publisher: CRC Press
Published: 2020-07-15
Total Pages: 318
ISBN-13: 0429998090
DOWNLOAD EBOOKTo surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.