(Sub)-millimeter Wave On-wafer Calibration and Device Characterization
(Sub)-millimeter Wave On-wafer Calibration and Device Characterization

Author: Marco Cabbia

Publisher:

Published: 2021

Total Pages: 0

ISBN-13:

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Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to ongoing innovations in terms of nanoscale technology manufacturing, devices capable of operating in the sub-millimeter wave region are becoming a reality, and need to support the demand for high frequency circuits and systems. To have accurate models at such frequencies, it is no longer possible to limit the parameter extraction below 110 GHz, and new techniques for obtaining reliable measurements of passive and active devices must be investigated.In this thesis, we examine the on-wafer S-parameters characterization of various passive test structures and SiGe HBTs in STMicroelectronics' B55 technology, up to 500 GHz. We start with an introduction of the measuring equipment usually employed for this type of analysis, then moving on to the various probe stations adopted at the IMS Laboratory, and finally focusing on calibration and deembedding techniques, reviewing the major criticalities of high-frequency characterization and comparing two on-wafer calibration algorithms (SOLT and TRL) up to the WR-2.2 band.Two photomask production runs for on-wafer characterization, both designed at IMS, are considered: we introduce a new floorplan design and evaluate its ability to limit parasitic effects as well as the effect of the environment (substrate, neighbors, and crosstalk). For our analysis, we rely on electromagnetic simulations and joint device model + probe EM simulations, both including probe models for an evaluation of measurement results closer to real-world conditions.Finally, we present some test structures to evaluate unwanted impacts on millimeter wave measurements and novel transmission line design solutions. Two promising designs are carefully studied: the "M3 layout", which aims to characterize the DUT in a single-tier calibration, and the "meander lines", which keeps the inter-probe distance constant by avoiding any sort of probe displacement during on-wafer measurements.

On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: CRC Press

Published: 2022-09-01

Total Pages: 279

ISBN-13: 1000792854

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: Electronic Materials and Devic

Published: 2019-05-30

Total Pages: 0

ISBN-13: 9788770221122

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

Microwave De-embedding
Microwave De-embedding

Author: Gilles Dambrine

Publisher: Elsevier Inc. Chapters

Published: 2013-11-09

Total Pages: 42

ISBN-13: 0128068566

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This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.

Advanced Millimeter-wave Technologies
Advanced Millimeter-wave Technologies

Author: Duixian Liu

Publisher: John Wiley & Sons

Published: 2009-03-03

Total Pages: 850

ISBN-13: 9780470742952

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This book explains one of the hottest topics in wireless and electronic devices community, namely the wireless communication at mmWave frequencies, especially at the 60 GHz ISM band. It provides the reader with knowledge and techniques for mmWave antenna design, evaluation, antenna and chip packaging. Addresses practical engineering issues such as RF material evaluation and selection, antenna and packaging requirements, manufacturing tolerances, antenna and system interconnections, and antenna One of the first books to discuss the emerging research and application areas, particularly chip packages with integrated antennas, wafer scale mmWave phased arrays and imaging Contains a good number of case studies to aid understanding Provides the antenna and packaging technologies for the latest and emerging applications with the emphases on antenna integrations for practical applications such as wireless USB, wireless video, phase array, automobile collision avoidance radar, and imaging

On-Wafer Microwave Measurements and De-embedding
On-Wafer Microwave Measurements and De-embedding

Author: Errikos Lourandakis

Publisher: Artech House

Published: 2016-07-31

Total Pages: 251

ISBN-13: 1630813710

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This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.

MM-wave On-wafer Characterization of Electro-optic Devices: a New, Simple Approach
MM-wave On-wafer Characterization of Electro-optic Devices: a New, Simple Approach

Author:

Publisher:

Published: 2000

Total Pages:

ISBN-13:

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A new simple experimental set-up both for on-wafer and in-package electrical and electro-optic characterization of electro-optic devices up to 40 GHz is presented. The technique makes only use of a conventional network vector analyzer (NVA) and of a calibrated high-speed photodetector. The electro-optic transmission coefficient is simply deembedded from the electrical S21 using the detector calibrated responsivity. The RF calibration of the set-up implements the RSOL technique. The results obtained are shown to be comparable with the ones given by commercially available instrumentation, both in terms of accuracy and repeatability. The frequency bandwidth is only determined by the NVA bandwidth provided that the photodetector RF output is well above the NVA noise floor. Firstly some comparison with commercially available instrumentation up to 40 GHz on in-package device will be shown to validate the technique, after that, results concerning both in-package and on-wafer devices up to 40 GHz will be reported.

The VNA Applications Handbook
The VNA Applications Handbook

Author: Gregory Bonaguide

Publisher: Artech House

Published: 2019-09-30

Total Pages: 384

ISBN-13: 1630816027

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Written by prominent experts in the field, this authoritative new resource provides guidelines for performing a wide variety of Vector Network Analyzers (VNA) measurements. The capabilities and limitations of modern VNA in the context of challenging real-world applications are explained, as well as insights for optimizing test setups and instrument settings, making accurate measurements and, equally important, avoiding costly mistakes. Organized by topic, the readers can focus on chapters covering particular measurement challenges. Application topics include linear and non-linear measurements of passive and active devices, frequency converting devices, and special considerations for high-power, high-gain, and pulsed devices. Signal Integrity and time-domain reflectometry are covered, as well as emerging applications at millimeter-wave frequencies driven by 5G and automotive radar. Waveguide is presented, with emphasis on understanding guided-wave propagation and the associated calculations required for creating calibration standards. Each application is supported by illustrations that help explain key concepts and VNA screenshots are used to show both expected and, in some cases, unexpected results. This book equips engineers and lab technicians to better understand these important instruments, and effectively use them to develop the technologies that drive our world.

Microwave De-embedding
Microwave De-embedding

Author: Giovanni Crupi

Publisher: Academic Press

Published: 2013-11-09

Total Pages: 481

ISBN-13: 0124045928

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This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.