Sponsorship of the International Conference on Silicon Carbide and Related Materials 1999
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Published: 1999
Total Pages: 0
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DOWNLOAD EBOOKThe funds from this contract were for partial support of the International conference on Silicon Carbide and Related Materials 1999 (ICSCRM'99) which was held October 10-17, 1999 in Research Triangle Park, North Carolina. The principal objective of this interdisciplinary conference was to bring together the world's leading experts in the growth and characterization of wide bandgap materials, as well as experts involved in device related research and device fabrication and characterization. The conference promoted and produced cross-fertilization of knowledge and ideas among researchers from the many disciplines represented regarding the full development and deployment of wide bandgap materials and devices. The microelectronic and optoelectronic devices now being fabricated and envisioned from these materials, principally SiC and III-Nitrides, potentially possess the ultimate in properties in terms of power, frequency and temperature of operation and light emission. They are of considerable interest for the future establishment of the all-electronic Air Force.