Fundamentals of Semiconductors

Fundamentals of Semiconductors

Author: Peter YU

Publisher: Springer Science & Business Media

Published: 2007-05-08

Total Pages: 651

ISBN-13: 3540264752

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Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.


Surface Microscopy with Low Energy Electrons

Surface Microscopy with Low Energy Electrons

Author: Ernst Bauer

Publisher: Springer

Published: 2014-07-10

Total Pages: 513

ISBN-13: 1493909355

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This book, written by a pioneer in surface physics and thin film research and the inventor of Low Energy Electron Microscopy (LEEM), Spin-Polarized Low Energy Electron Microscopy (SPLEEM) and Spectroscopic Photo Emission and Low Energy Electron Microscopy (SPELEEM), covers these and other techniques for the imaging of surfaces with low energy (slow) electrons. These techniques also include Photoemission Electron Microscopy (PEEM), X-ray Photoemission Electron Microscopy (XPEEM), and their combination with microdiffraction and microspectroscopy, all of which use cathode lenses and slow electrons. Of particular interest are the fundamentals and applications of LEEM, PEEM, and XPEEM because of their widespread use. Numerous illustrations illuminate the fundamental aspects of the electron optics, the experimental setup, and particularly the application results with these instruments. Surface Microscopy with Low Energy Electrons will give the reader a unified picture of the imaging, diffraction, and spectroscopy methods that are possible using low energy electron microscopes.


Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

Author: J.-P. Deville

Publisher: Elsevier

Published: 2001-07-03

Total Pages: 333

ISBN-13: 0080541860

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This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.


Molecular Beam Epitaxy

Molecular Beam Epitaxy

Author: John Wilfred Orton

Publisher:

Published: 2015

Total Pages: 529

ISBN-13: 0199695822

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The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.


Heteroepitaxy of Semiconductors

Heteroepitaxy of Semiconductors

Author: John E. Ayers

Publisher: CRC Press

Published: 2016-10-03

Total Pages: 794

ISBN-13: 1315355175

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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.


Compound Semiconductor Photonics

Compound Semiconductor Photonics

Author: Chua Soo-Jin

Publisher: CRC Press

Published: 2020-03-26

Total Pages: 242

ISBN-13: 9814310441

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This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat


Solid Surfaces, Interfaces and Thin Films

Solid Surfaces, Interfaces and Thin Films

Author: Hans Lüth

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 566

ISBN-13: 3662043521

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This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. Compa- red to the earlier editions, which bore the title "Surfaces and Interfaces of Solid Materials", the book now places more emphasis on thin films, including also their superconducting and ferromagnetic properties. The present 4th edition thus presents techniques of preparing well-defined solid surfaces and interfaces, fundamental aspects of adsorption and layer growth, as well as basic models for the descripti- on of structural, vibronic and electronic properties of sur- faces, interfaces and thin films. Because of their importan- ce for modern information technology, significant attention is paid to the electronic properties of semiconductor inter- faces and heterostructures. Collective phenomena , such as superconductivity and ferromagnetism, also feature promi- nently. Experimental sections covering essential measurement and preparation techniques are presented in separate panels.


Semiconductor Nanostructures for Optoelectronic Applications

Semiconductor Nanostructures for Optoelectronic Applications

Author: Todd D. Steiner

Publisher: Artech House

Published: 2004

Total Pages: 438

ISBN-13: 9781580537520

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Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.


Atomic Layer Epitaxy

Atomic Layer Epitaxy

Author: T. Suntola

Publisher: Springer

Published: 2011-09-20

Total Pages: 280

ISBN-13: 9789401066617

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This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.