Optoelectronics Materials and Devices follows the Optoelectronics Books II and III published in 2011 and 2013, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first two books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in this edition testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.
This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.
The use of advanced engineering ceramic films and powders for structural and functional applications is expanding rapidly. Improved materials and innovative methods of fabrication are needed to enhance the engineering performance and reduce the production costs. This book highlights innovative/cost-effective material-processing methods, at a mature production stage and also in development. In addition, issues and strategies associated with scaling-up are emphasized.
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
This exhaustive work in several volumes and over 2500 pages provides a thorough treatment of ultra-high temperature materials (with melting points around or over 2500 °C). The first volume focuses on carbon (graphene/graphite) and refractory metals (W, Re, Os, Ta, Mo, Nb and Ir), whilst the second and third are dedicated to refractory transition metal 4-5 groups carbides. Topics included are physical (structural, thermal, electro-magnetic, optical, mechanical, nuclear) and chemical (more than 3000 binary, ternary and multi-component systems, including those used for materials design, data on solid-state diffusion, wettability, interaction with various elements and compounds in solid and liquid states, gases and chemicals in aqueous solutions) properties of these materials. It will be of interest to researchers, engineers, postgraduate, graduate and undergraduate students alike. The readers/users are provided with the full qualitative and quantitative assessment, which is based on the latest updates in the field of fundamental physics and chemistry, nanotechnology, materials science, design and engineering.
The Advanced Study Institute on Synthesis, Functional Properties and Applications of Nanostructures, held at the Knossos Royal Village, Heraklion, Crete, Greece, July 26, 2002 - August 4, 2002, successfully reviewed the state-of-the-art of nanostructures and nanotechnology. It was concluded that Nanotechnology is widely agreed to be the research focus that will lead to the next generation of breakthroughs in science and engineering. There are three cornerstones to the expectation that Nanotechnology will yield revolutionary advances in understanding and application: • Breakthroughs in properties that arise from materials fabricated from the nanoscale. • Synergistic behavior that arise from the combination of disparate types of materials (soft vs. hard, organic vs. inorganic, chemical vs. biological vs. solid state) at the nanoscale. • Exploitation of natural (e.g. chemical and biological) assembly mechanisms that can accomplish structural control at the nanoscale. It is expected that this will lead to paradigms for assembling bio-inspired functional systems that accomplish desirable properties that are either unavailable or prohibitively expensive using top-down approaches.
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices. Contents: Physics of Nanostructures: Polarons in Quantum Wells (A I Bibik et al.); Screening of Extra Point Charge in a Few Particle Coulomb System (N A Poklonski et al.); Electric Field Effect on Absorption Spectra of an Ensemble of Close-Packed CdSe Nanocrystals (L I Gurinovich et al.); Influence of Surface Phases on Electrical Conductivity of Silicon Surface (D A Tsukanov et al.); Chemistry of Nanostructures: Formation of Ultradisperse Bimetallic Particles by Redox Processes in Aqueous Solutions (Yu A Fedutik et al.); Fast Electrochemical Impedance Spectroscopy for Nanochemistry and Nanophysics (G A Ragoisha & A S Bondarenko); Features of Luminescent Semiconductor Nanowire Array Formation by Electrodeposition into Porous Alumina (S A Gavrilov et al.); Nanotechnology: Massively Parallel Atomic Lines on Silicon Carbide (P Soukiassian); Advancing Magnetic Force Microscopy (I Fedorov et al.); Porous Silicon as a Material for Enhancement of Electron Field Emission (A A Evtukh et al.); Nanostructure Based Devices: A New Multipeak Resonant Tunneling Diode for Signal Processing Application (A N Kholod et al.); Long Term Charge Relaxation in Silicon Single Electron Transistors (A Savin et al.); Resonant Tunneling Through an Array of Quantum Dots Coupled to Superconductors Under the Effect of Magnetic Field (A N Mina); and other papers. Readership: Undergraduates, PhD students and researchers in nanotechnology.