Si Front-end Processing
Author:
Publisher:
Published: 1999
Total Pages: 320
ISBN-13:
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Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
Author: Aditya Agarwal
Publisher:
Published: 2001-04-09
Total Pages: 448
ISBN-13:
DOWNLOAD EBOOKThis proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Si Front-End Processing: Volume 669
Author: Erin C. Jones
Publisher:
Published: 2001-12-14
Total Pages: 362
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Advanced Short-time Thermal Processing for Si-based CMOS Devices
Author: Fred Roozeboom
Publisher: The Electrochemical Society
Published: 2003
Total Pages: 488
ISBN-13: 9781566773966
DOWNLOAD EBOOKHandbook of Silicon Based MEMS Materials and Technologies
Author: Markku Tilli
Publisher: William Andrew
Published: 2015-09-02
Total Pages: 827
ISBN-13: 0323312233
DOWNLOAD EBOOKThe Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures Geared towards practical applications rather than theory
Simulation of Semiconductor Processes and Devices 2007
Author: Tibor Grasser
Publisher: Springer Science & Business Media
Published: 2007-09-18
Total Pages: 472
ISBN-13: 3211728600
DOWNLOAD EBOOKThe "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Simulation of Semiconductor Processes and Devices 2001
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 463
ISBN-13: 3709162440
DOWNLOAD EBOOKThis volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Author: Peter Pichler
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 576
ISBN-13: 3709105978
DOWNLOAD EBOOKThis book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Semiconductor Wafer Bonding 9: Science, Technology, and Applications
Author: Helmut Baumgart
Publisher: The Electrochemical Society
Published: 2006
Total Pages: 398
ISBN-13: 156677506X
DOWNLOAD EBOOKThis issue of ECS Transactions covers state-of-the-art R&D results of the last 1.5 years in the field of semiconductor wafer bonding technology. Wafer Bonding Technology can be used to create novel composite materials systems and devices what would otherwise be unattainable. Wafer bonding today is rapidly expanding applications in such diverse fields as photonics, sensors, MEMS, X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI), and Nanotechnologies.
High Purity Silicon 10
Author: Cor L. Claeys
Publisher: The Electrochemical Society
Published: 2008-10
Total Pages: 370
ISBN-13: 156677652X
DOWNLOAD EBOOKThe issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.
