This OECD Emission Scenario Document (ESD) provides information on the sources, use patterns, and potential release pathways of chemicals used as chemical vapour deposition (CVD) precursors in the semiconductor industry. The document presents standard approaches for estimating environmental releases and occupational exposures, and discusses the typical engineering controls used to mitigate exposure to CVD precursors.
This emission scenario document (ESD) for chemicals used in the electronics industry provides information on the sources and release pathways of chemicals during various processing techniques in this varied industry sector, to help estimate releases of chemicals into the environment.
This OECD Emission Scenario Document (ESD) provides information on the sources, use patterns, and potential release pathways of non-volatile chemicals used in textile dyes. The document focuses primarily on the application of dyes to fibers, yarns and fabrics by batch or continuous processes.
This OECD Emission Scenario Document (ESD) is a complement document to the Coating Industry (Paints, Lacquers and Varnishes, ESD No. 22 and provides information on the sources, use pattern and release pathways of chemicals used as solvents for industrial coatings, so as to help estimating the amount of chemicals released into the environment.
This OECD Emission Scenario Document (ESD) provides information on the sources, use patterns, and potential release pathways of chemicals used in the semiconductor manufacturing industry.
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
