Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.
Addressing the growing demand for larger capacity in information technology, VLSI Micro- and Nanophotonics: Science, Technology, and Applications explores issues of science and technology of micro/nano-scale photonics and integration for broad-scale and chip-scale Very Large Scale Integration photonics. This book is a game-changer in the sense that it is quite possibly the first to focus on "VLSI Photonics". Very little effort has been made to develop integration technologies for micro/nanoscale photonic devices and applications, so this reference is an important and necessary early-stage perspective on this field. New demand for VLSI photonics brings into play various technological and scientific issues, as well as evolutionary and revolutionary challenges—all of which are discussed in this book. These include topics such as miniaturization, interconnection, and integration of photonic devices at micron, submicron, and nanometer scales. With its "disruptive creativity" and unparalleled coverage of the photonics revolution in information technology, this book should greatly impact the future of micro/nano-photonics and IT as a whole. It offers a comprehensive overview of the science and engineering of micro/nanophotonics and photonic integration. Many books on micro/nanophotonics focus on understanding the properties of individual devices and their related characteristics. However, this book offers a full perspective from the point of view of integration, covering all aspects of benefits and advantages of VLSI-scale photonic integration—the key technical concept in developing a platform to make individual devices and components useful and practical for various applications.
Although it took some time to establish the word, photonics is both widely accepted and used throughout the world and a major area of activity concerns nonlinear materials. In these the nonlinearity mainly arises from second-order or third-order nonlinear optical processes. A restriction is that second-order processes only occur in media that do not possess a centre of symmetry. Optical fibres, on the other hand, being made of silica glass, created by fusing SiO molecules, are made of material with a centre of z symmetry, so the bulk of all processes are governed by third-order nonlinearity. Indeed, optical fibre nonlinearities have been extensively studied for the last thirty years and can be truly hailed as a success story of nonlinear optics. In fact, the fabrication ofsuch fibres, and the exploitation oftheir nonlinearity, is in an advanced stage - not least being their capacity to sustain envelope solitons. What then ofsecond-order nonlinearity? This is also well-known for its connection to second-harmonic generation. It is an immediate concern, however, to understand how waves can mix and conserve both energy and momentum ofthe photons involved. The problem is that the wave vectors cannot be made to match without a great deal of effort, or at least some clever arrangement has to be made - a special geometry, or crystal arrangement. The whole business is called phase matching and an inspection ofthe state-of-the-art today, reveals the subject to be in an advanced state.
