Semiconductor Interfaces at the Sub-Nanometer Scale
Semiconductor Interfaces at the Sub-Nanometer Scale

Author: H.W.M Salemink

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 252

ISBN-13: 940112034X

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The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Semiconductor Interfaces at the Sub-Nanometer Scale
Semiconductor Interfaces at the Sub-Nanometer Scale

Author: H.W.M Salemink

Publisher: Springer

Published: 2012-09-27

Total Pages: 256

ISBN-13: 9789401049009

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The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Optics at the Nanometer Scale
Optics at the Nanometer Scale

Author: M. Nieto-vesperinas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 299

ISBN-13: 9400902476

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Optics at the Nanometer Scale: Imaging and Storing with Photonic Near Fields deals with the fundamentals of and the latest developments and applications of near-field optical microscopy, giving basic accounts of how and under what circumstances superresolution beyond the half- wavelength Rayleigh limit is achieved. Interferometric and fluorescence techniques are also described, leading to molecular and even atomic resolution using light. The storage of optical information at this level of resolution is also addressed.

Chemical, Structural and Electronic Analysis of Heterogeneous Surfaces on Nanometer Scale
Chemical, Structural and Electronic Analysis of Heterogeneous Surfaces on Nanometer Scale

Author: R. Rosei

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 138

ISBN-13: 9401157243

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An assessment of the recent achievements and relative strengths of two developing techniques for characterising surfaces at the nanometer scale: (i) local probe methods, including scanning tunnelling microscopy and its derivatives; and (ii) nanoscale photoemission and absorption spectroscopy for chemical analysis. The keynote lectures were delivered by some of the world's best scientists in the field and some of the topics covered include: (1) The possible application of STM in atomically resolved chemical analysis. (2) The principles of scanning force/friction and scanning near-field optical microscopes. (3) The scanning photoemission electron microscopes built at ELETTRA and SRRC, with a description of synchrotron radiation microscopy. (4) Recent progress in the development of spatially-resolved photoelectron microscopy, especially the use of zone plate photon optics. (5) The present status of non-scanning photoemission microscopy with slow electrons. (6) the BESSY 2 project for a non-scanning photoelectron microscope with electron optics. (7) Spatially-resolved in situ reaction studies of chemical waves and oscillatory phenomena with the UV photoemission microscope.

Handbook of Compound Semiconductors
Handbook of Compound Semiconductors

Author: Paul H. Holloway

Publisher: Cambridge University Press

Published: 2008-10-19

Total Pages: 937

ISBN-13: 0080946143

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This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Frontiers in Nanoscale Science of Micron/Submicron Devices
Frontiers in Nanoscale Science of Micron/Submicron Devices

Author: A.-P. Jauho

Publisher: Springer Science & Business Media

Published: 1996-10-31

Total Pages: 576

ISBN-13: 9780792343011

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Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.

Nanoscale Probes of the Solid/Liquid Interface
Nanoscale Probes of the Solid/Liquid Interface

Author: Andrew A. Gewirth

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 340

ISBN-13: 9401584354

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Nanoscale Probes of the Solid--Liquid Interface deals with the use of the scanning tunnelling microscope (STM) and related instrumentation to examine the phenomena occurring at the interface between solid and liquid. Scanning probe microscopy (the collective term for such instruments as the STM, the atomic force microscope and related instrumentation) allows detailed, real space atomic or lattice scale insight into surface structures, information which is ideally correlated with surface reactivity. The use of SPM methods is not restricted to ultrahigh vacuum: the STM and AFM have been used on samples immersed in solution or in ambient air, thus permitting a study of environmental effects on surfaces. At the solid--liquid interface the reactivity derives precisely from the presence of the solution and, in many cases, the application of an external potential. Topics covered in the present volume include: the advantages of studying the solid--liquid interface and the obtaining of additional information from probe measurements; interrelationships between probe tip, the interface and the tunnelling process; STM measurements on semiconductor surfaces; the scanning electrochemical microscope, AFM and the solid--liquid interface; surface X-ray scattering; cluster formation on graphite electrodes; Cu deposition on Au surfaces; macroscopic events following Cu deposition; deposition of small metallic clusters on carbon; overpotential deposition of metals; underpotential deposition; STM on nanoscale ceramic superlattices; reconstruction events on Au(ijk) surfaces; Au surface reconstructions; friction force measurements on graphite steps under potential control; and the biocompatibility of materials.

Microcavities and Photonic Bandgaps: Physics and Applications
Microcavities and Photonic Bandgaps: Physics and Applications

Author: J.G. Rarity

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 600

ISBN-13: 9400903138

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The control of optical modes in microcavities or in photonic bandgap (PBG) materials is coming of age! Although these ideas could have been developed some time ago, it is only recently that they have emerged, due to advances in both atomic physics and in fabrication techniques, be it on the high-quality dielectric mirrors required for high-finesse Fabry Perot resonators or in semiconductor multilayer deposition methods. Initially the principles of quantum electro-dynamics (QED) were demonstrated in elegant atomic physics experiments. Now solid-state implementations are being investigated, with several subtle differences from the atomic case such as those due to their continuum of electronic states or the near Boson nature of their elementary excitations, the exciton. Research into quantum optics brings us ever newer concepts with potential to improve system performance such as photon squeezing, quantum cryptography, reversible taps, photonic de Broglie waves and quantum computers. The possibility of implementing these ideas with solid-state systems gives us hope that some could indeed find their way to the market, demonstrating the continuing importance of basic research for applications, be it in a somewhat more focused way than in earlier times for funding.

Characterization of Semiconductor Heterostructures and Nanostructures
Characterization of Semiconductor Heterostructures and Nanostructures

Author: Giovanni Agostini

Publisher: Newnes

Published: 2013-04-11

Total Pages: 829

ISBN-13: 044459549X

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Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures