Bulk and epitaxial growth, novel characterization techniques, "Back-gating" effects and the nature of defects and deep levels are covered in this volume of industrial and academic research papers. Applications are discussed, as well as the chemistry of compound semiconductors.
The topics that attracted the attention of this group of researchers, whose background ranged from the academic to the industrial, included those which have been integral to all five previous conferences such as the nature of defects and deep levels, and the details of the dependence of device performance on materials properties, as well as results from new characterization techniques and the promising new approach of epitaxial growth of high resistivity buffer layers. Several papers, and a rousing panel discussion, addressed the issues of stoichiometry and Liquid Encapsulated Czochralski puller chemistry. Semi-insulating Indium Phosphide and Indium Gallium Arsenide were also discussed, a reflection of their growing technological significance.
Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.
The 7th Semi-Insulating III-V Materials Conference brought together specialists from all over the world. This volume contains original research papers on growth, characterization, theory, device applications, and materials problems as they relate to semi-insulating III-V compounds, such as GaAs and InP. The latest conference focussed in particular on characterization, device preparation and low temperature MBE. The effects of defects on device performance are considered. Papers of particular note include those by Sumino and Yonenaga, Brozel and Tuezemen, Bassignana, Manasreh and Jantz.
