Applied RHEED

Applied RHEED

Author: Wolfgang Braun

Publisher: Springer Science & Business Media

Published: 1999-04-16

Total Pages: 240

ISBN-13: 9783540651994

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The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.


Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces

Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces

Author: P.K. Larsen

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 526

ISBN-13: 146845580X

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This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.


Instrumentation Development for Interfacial Studies and Analysis of Substrate-supported Molecular Thin Films by Reflection High-energy Electron Diffraction

Instrumentation Development for Interfacial Studies and Analysis of Substrate-supported Molecular Thin Films by Reflection High-energy Electron Diffraction

Author: Karjini Rajagopal

Publisher:

Published: 2015

Total Pages:

ISBN-13:

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Chemical and physical properties at interfaces play key roles in understanding a number of diverse phenomena. A better molecular-level understanding of the interfacial interactions is needed to utilize them in the potential applications. Different surface-analysis techniques have their own distinct level of surface sensitivity and probe different surface characteristics of the system of interest. Our interest is to directly visualize the structure of atoms and molecules at interfaces of the substrate-supported molecular thin films using reflective high-energy electron diffraction (RHEED). The shorter wavelength of an electron compared to typical bond lengths and its larger scattering cross section make it ideal for surface and interfacial probing. Interfacial behaviors in structure, interactions, phase transition, and thermal evolution of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][Tf2N]) vapor deposited ionic liquid (IL) thin films on substrate surfaces such as highly oriented pyrolytic graphite (HOPG), Hydrogen terminated Si(111), mica, Cu(111) and Ni(111) were studied. By comparing the ordered structural behavior of 3 nm thick [EMIM][Tf2N] film on HOPG with other surfaces, it is found that the terrace surface morphology of HOPG plays a role as a template for vertical stacking of IL ion pairs. The phase transition of [EMIM][Tf2N] on HOPG happened at 256 K, which matches with the melting point of bulk [EMIM][Tf2N] IL. The desorption of 3 nm [EMIM][Tf2N] IL from substrate happened starting from 340 - 360 K to ~ 375 K. As a second system, the interfacial structural ordering of water molecules on cadmium telluride (CdTe(111)A) surface and oxidized CdTe(111)A surface was investigated. A molecular beam doser system was developed to deposit the water molecules in a controlled and quantitative way. On CdTe(111)A surface, the deposited water molecules became ordered ice crystallites by adopting the geometry of the underlying substrate as evidenced by the Bragg diffraction spots. On oxidized CdTe(111)A surface upon deposition, initially formed amorphous water layer turned into Debye–Scherrer diffraction rings indicating the randomly oriented ice crystallites of cubic ice form. From the studies of both systems, the main role of the supported substrate in the ordering of molecules at the interface is found.


High Energy Electron Diffraction and Microscopy

High Energy Electron Diffraction and Microscopy

Author: L. M. Peng

Publisher: Oxford University Press

Published: 2004-01-08

Total Pages: 558

ISBN-13: 0191004782

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This book provides a comprehensive introduction to high energy electron diffraction and elastic and inelastic scattering of high energy electrons, with particular emphasis on applications to modern electron microscopy. Starting from a survey of fundamental phenomena, the authors introduce the most important concepts underlying modern understanding of high energy electron diffraction. Dynamical diffraction in transmission (THEED) and reflection (RHEED) geometries is treated using a general matrix theory, where computer programs and worked examples are provided to illustrate the concepts and to familiarize the reader with practical applications. Diffuse and inelastic scattering and coherence effects are treated comprehensively both as a perturbation of elastic scattering and within the general multiple scattering quantum mechanical framework of the density matrix method. Among the highlights are the treatment of resonance diffraction of electrons, HOLZ diffraction, the formation of Kikuchi bands and lines and ring patterns, and application of diffraction to monitoring of growing surfaces. Useful practical data are summarised in tables including those of electron scattering factors for all the neutral atoms and many ions, and the temperature dependent Debye-Waller factors given for over 100 elemental crystals and compounds.


Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Author: J Pollman

Publisher: World Scientific

Published: 1994-06-09

Total Pages: 818

ISBN-13: 9814552399

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Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.