Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

Author: Sourav Adhikary

Publisher: Springer

Published: 2017-09-06

Total Pages: 72

ISBN-13: 9811052905

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This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.


Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Author: Arjun Mandal

Publisher: Springer

Published: 2017-06-02

Total Pages: 84

ISBN-13: 9811043345

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This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.


Photodetectors

Photodetectors

Author: Bahram Nabet

Publisher: Woodhead Publishing

Published: 2023-02-10

Total Pages: 516

ISBN-13: 0081028768

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Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD's) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors. The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book. All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection. - Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments - Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits - Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors


Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures

Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures

Author: Saumya Sengupta

Publisher: Springer

Published: 2017-08-04

Total Pages: 77

ISBN-13: 9811057028

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This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.


Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures

Author: Alexander V. Latyshev

Publisher: Elsevier

Published: 2016-11-10

Total Pages: 553

ISBN-13: 0128105135

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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries


Frontiers in Electronic Technologies

Frontiers in Electronic Technologies

Author: S.R.S Prabaharan

Publisher: Springer

Published: 2017-03-23

Total Pages: 167

ISBN-13: 9811042357

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This book is a collection of keynote lectures from international experts presented at International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompasses six symposia covering all aspects of electronics and communications domains, including relevant nano/micro materials and devices . This volume comprises of recent research in areas like computational signal processing analysis, intelligent embedded systems, nanoelectronic materials and devices, optical and microwave technologies, VLSI design: circuits systems and application, and wireless communication networks, and the internet of things. The contents of this book will be useful to researchers, professionals, and students working in the core areas of electronics and their applications, especially to signal processing, embedded systems, and networking.


Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Author: Arjun Mandal

Publisher: Springer

Published: 2017-06-16

Total Pages: 0

ISBN-13: 9789811043338

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This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.


Fabrication of GaAs Devices

Fabrication of GaAs Devices

Author: Albert G. Baca

Publisher: IET

Published: 2005-09

Total Pages: 372

ISBN-13: 9780863413537

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This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.


Infrared Detectors

Infrared Detectors

Author: Antonio Rogalski

Publisher: CRC Press

Published: 2010-11-15

Total Pages: 900

ISBN-13: 1420076728

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Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un


Encyclopedia of Applied Physics, 23 Volume Set

Encyclopedia of Applied Physics, 23 Volume Set

Author: George L. Trigg

Publisher: Wiley-VCH

Published: 1993-11-12

Total Pages:

ISBN-13: 9783527268412

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The 23-volume Encyclopedia of Applied Physics - EAP - is a monumental first in scope, depth, and usability. It demonstrates the synergy between physics and technological applications. Information is presented according to the following subject areas: * General Aspects; Mathematical and Information Techniques * Measurement Sciences, General Devices and/or Methods * Nuclear and Elementary Particle Physics * Atomic and Molecular Physics * Electricity and Magnetism * Optics (classical and quantum) * Acoustics * Thermodynamics and Properties of Gases * Fluids and Plasma Physics * Condensed Matter: Structure and Mechanical Properties; Thermal, Acoustic, and Quantum Properties ; Electronic Properties ; Magnetic Properties ; Dielectrical and Optical Properties; Surfaces and Interfaces * Materials Science * Physical Chemistry * Energy Research and Environmental Physics * Biophysics and Medical Physics * Geophysics, Meteorology, Space Physics and Aeronautics EAP consists of 23 hardcover volumes arranged alphabetically. A cumulative subject index is published after every three volumes, with a full index accompanying the complete work.