Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.
Quantum Wells, Wires and Dots Second Edition: Theoretical andComputational Physics of Semiconductor Nanostructures providesall the essential information, both theoretical and computational,for complete beginners to develop an understanding of how theelectronic, optical and transport properties of quantum wells,wires and dots are calculated. Readers are lead through a series ofsimple theoretical and computational examples giving solidfoundations from which they will gain the confidence to initiatetheoretical investigations or explanations of their own. Emphasis on combining the analysis and interpretation ofexperimental data with the development of theoretical ideas Complementary to the more standard texts Aimed at the physics community at large, rather than just thelow-dimensional semiconductor expert The text present solutions for a large number of realsituations Presented in a lucid style with easy to follow steps related toaccompanying illustrative examples
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
