Purity Control of Semiconductors by the Method of Capacitance Transient Spectroscopy
Author: Lev Solomonovich Berman
Publisher:
Published: 1995
Total Pages: 122
ISBN-13:
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Author: Lev Solomonovich Berman
Publisher:
Published: 1995
Total Pages: 122
ISBN-13:
DOWNLOAD EBOOKAuthor: Cor L. Claeys
Publisher: The Electrochemical Society
Published: 1996
Total Pages: 606
ISBN-13: 9781566771566
DOWNLOAD EBOOKAuthor: Semiconductor Equipment and Materials International
Publisher:
Published: 2006
Total Pages: 0
ISBN-13:
DOWNLOAD EBOOKAuthor: W. Murray Bullis
Publisher:
Published: 1972
Total Pages: 60
ISBN-13:
DOWNLOAD EBOOKAuthor: United States. National Bureau of Standards
Publisher:
Published: 1988
Total Pages: 608
ISBN-13:
DOWNLOAD EBOOKAuthor: Isaac Glick
Publisher:
Published: 1984
Total Pages: 145
ISBN-13:
DOWNLOAD EBOOKAuthor: E M Anastassakis
Publisher: World Scientific
Published: 1990-11-29
Total Pages: 2768
ISBN-13: 9814583634
DOWNLOAD EBOOKGathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Author: Hideyo Okushi
Publisher:
Published: 1986
Total Pages: 100
ISBN-13:
DOWNLOAD EBOOKAuthor: Dieter K. Schroder
Publisher: John Wiley & Sons
Published: 2015-06-29
Total Pages: 800
ISBN-13: 0471739065
DOWNLOAD EBOOKThis Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.