Progress in Semiconductors II - Electronic and Optoelectronic Applications: Volume 744
Progress in Semiconductors II - Electronic and Optoelectronic Applications: Volume 744

Author: B. D. Weaver

Publisher:

Published: 2003-04-16

Total Pages: 712

ISBN-13:

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Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.

New Applications for Wide-Bandgap Semiconductors: Volume 764
New Applications for Wide-Bandgap Semiconductors: Volume 764

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-09-29

Total Pages: 456

ISBN-13:

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Wide-bandgap semiconductors such as SiC, GaN and related alloys, BN and related alloys, ZnGeSiN2, ZnO, and others continue to find new applications in solid-state lighting, sensors, filters, high-power electronics, biological detection, and spintronics. Improved bulk and epitaxial growth, processing, device design, and understanding of the physics of transport in heterostructures are all necessary for realization of these new technologies. The papers in this book span a range of subjects from material growth and characterization to the processing and application of devices in the electronic, as well as the optoelectronic, fields. Topics include: special invited papers; growth, processing and devices; novel applications for wide-bandgap semiconductors; oxides, heterostructures and devices; processing and devices and emerging areas.

GaN and Related Alloys - 2002: Volume 743
GaN and Related Alloys - 2002: Volume 743

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-06-02

Total Pages: 900

ISBN-13:

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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Rare Earth and Transition Metal Doping of Semiconductor Materials
Rare Earth and Transition Metal Doping of Semiconductor Materials

Author: Volkmar Dierolf

Publisher: Woodhead Publishing

Published: 2016-01-23

Total Pages: 472

ISBN-13: 008100060X

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Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

Novel Materials and Processes for Advanced CMOS: Volume 745
Novel Materials and Processes for Advanced CMOS: Volume 745

Author: Mark I. Gardner

Publisher:

Published: 2003-03-25

Total Pages: 408

ISBN-13:

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Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.

Solid-State Ionics - 2002: Volume 756
Solid-State Ionics - 2002: Volume 756

Author: Philippe Knauth

Publisher:

Published: 2003-04-17

Total Pages: 608

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Membranes: Volume 752
Membranes: Volume 752

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-04-11

Total Pages: 376

ISBN-13:

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The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.

Solid-State Chemistry of Inorganic Materials IV: Volume 755
Solid-State Chemistry of Inorganic Materials IV: Volume 755

Author: M. Á. Alario-Franco

Publisher:

Published: 2003-08-14

Total Pages: 512

ISBN-13:

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Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.

Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742
Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Author: Stephen E. Saddow

Publisher:

Published: 2003-03-25

Total Pages: 432

ISBN-13:

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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.