Semiconductors and Semimetals
Author:
Publisher: Academic Press
Published: 1984-12-20
Total Pages: 471
ISBN-13: 0080864074
DOWNLOAD EBOOKSemiconductors and Semimetals
Read and Download eBook Full
Author:
Publisher: Academic Press
Published: 1984-12-20
Total Pages: 471
ISBN-13: 0080864074
DOWNLOAD EBOOKSemiconductors and Semimetals
Author: 国立国会図書館 (Japan)
Publisher:
Published: 1972
Total Pages: 672
ISBN-13:
DOWNLOAD EBOOKAuthor: Electrochemical Society. Dielectrics and Insulation Division
Publisher:
Published: 1978
Total Pages: 525
ISBN-13:
DOWNLOAD EBOOKAuthor: C. Singh Bhatia
Publisher:
Published: 2000
Total Pages: 94
ISBN-13:
DOWNLOAD EBOOKAuthor: C.W. White
Publisher: Elsevier
Published: 2012-12-02
Total Pages: 788
ISBN-13: 0323142532
DOWNLOAD EBOOKLaser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
Author: R. Kossowsky
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 766
ISBN-13: 9400962169
DOWNLOAD EBOOKOver the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
Author: Waldemar Gorzkowski
Publisher: World Scientific
Published: 1990-02-01
Total Pages: 800
ISBN-13: 981461274X
DOWNLOAD EBOOKAuthor: Bhupendra N Dev
Publisher: World Scientific
Published: 2003-08-05
Total Pages: 199
ISBN-13: 9814485217
DOWNLOAD EBOOKThis book contains articles in several areas involving a dominant role of surfaces and interfaces. It is divided into four sections. The first section deals with theoretical and experimental aspects of the structure and morphology of clean surfaces and adsorbed layers on surfaces. The next section concerns growth on surfaces leading to semiconductor devices with quantum well, quantum wire and quantum dot structures; also deals with spin transport in 2DEG. Section 3 is on layered synthetic microstructures (LSMs). Analysis of interface roughness and layer composition of LSMs by X-ray techniques, fabrication of hard X-ray telescopes with LSMs, and diffusion across interfaces of LSMs are discussed here. The last section contains articles dealing with semiconductor surfaces exposed to ion beams and ion-irradiated semiconductor multilayers.
Author:
Publisher:
Published:
Total Pages: 1032
ISBN-13:
DOWNLOAD EBOOKIncludes entries for maps and atlases.
Author: Pradeep Lall
Publisher: CRC Press
Published: 2020-07-09
Total Pages: 327
ISBN-13: 0429611110
DOWNLOAD EBOOKThis book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The