Boron Nitride Nanomaterials

Boron Nitride Nanomaterials

Author: Ben McLean

Publisher: CRC Press

Published: 2022-12-23

Total Pages: 226

ISBN-13: 1000636674

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Boron nitride was first produced in the 18th century and, by virtue of its extraordinary mechanical strength, has found extensive application in industrial processes since the 1940s. However, the more recent discovery that boron nitride allotropes are as structurally diverse as those of carbon (e.g. fullerenes, graphene, carbon nanotubes) has placed this material, and particularly its low-dimensional allotropes, back at the forefront of modern material science. This book provides a comprehensive history of this rapid rise in the status of boron nitride and boron nitride nanomaterials, spanning the earliest examples of three-dimensional boron nitride allotropes, through to contemporary structures such as monolayer hexagonal boron nitride, boron nitride nanomeshes, boron nitride nanotubes and the incorporation of boron nitride into cutting-edge van der Waals heterostructures. It specifically focuses on the properties, applications and synthesis techniques for each of these allotropes and examines how the evolution in boron nitride production methods is linked to that in our understanding of how low-dimensional nanomaterials self-assemble, or ‘grow’, during synthesis. The book demonstrates the key synergy between growth mechanisms and the development of new, advanced nanostructured materials.


Handbook of Advanced Plasma Processing Techniques

Handbook of Advanced Plasma Processing Techniques

Author: R.J. Shul

Publisher: Springer Science & Business Media

Published: 2011-06-28

Total Pages: 664

ISBN-13: 3642569897

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Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.