Handbook of Semiconductor Manufacturing Technology
Handbook of Semiconductor Manufacturing Technology

Author: Yoshio Nishi

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 1720

ISBN-13: 1420017667

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Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

Ultra Clean Processing of Silicon Surfaces IV
Ultra Clean Processing of Silicon Surfaces IV

Author:

Publisher:

Published: 1998

Total Pages: 316

ISBN-13:

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The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP). The large number of papers dealing with wet cleaning processes makes it clear that this is still the dominant technology, in spite of the fact that interesting new results have been obtained by using dry cleaning processes. Another important topic at this conference was the use of ozonated DI-water as a replacement for hydrogen peroxide, or even sulfuric-based mixtures, thus offering potentially great economic and environmental savings. Altogether, the 71 contributions presented at the symposium represent a timely and authoritative assessment of the state of the art of this very interesting field.