Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Author: J Pollman

Publisher: World Scientific

Published: 1994-06-09

Total Pages: 818

ISBN-13: 9814552399

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Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.


Proceedings of 2nd International Conference and Exhibition on Materials Science and Chemistry 2017

Proceedings of 2nd International Conference and Exhibition on Materials Science and Chemistry 2017

Author: ConferenceSeries

Publisher: ConferenceSeries

Published: 2017-07-07

Total Pages: 91

ISBN-13:

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July 13-14, 2017 Berlin, Germany Key Topics : Materials Science and Engineering, Materials Chemistry in Developing Areas, Formulating Materials Chemistry, Materials Synthesis and Characterization, Insilico Materials Chemistry, Regenerative Materials Chemistry, Polymer Materials and Technology, Applied Materials Chemistry, Current Innovations in Materials Chemistry, Research Aspects of Materials Chemistry, Role of Graphene in Advanced Materials, Materials Chemistry and Physics, Nanomaterials,


Rapid Thermal Processing for Future Semiconductor Devices

Rapid Thermal Processing for Future Semiconductor Devices

Author: H. Fukuda

Publisher: Elsevier

Published: 2003-04-02

Total Pages: 161

ISBN-13: 0080540260

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This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.


Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors

Author: J.D. Chadi

Publisher: Springer Science & Business Media

Published: 2013-12-01

Total Pages: 1580

ISBN-13: 1461576822

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The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.


Structure Of Surfaces Iv, The - Proceedings Of The 4th International Conference On The Structure Of Surfaces

Structure Of Surfaces Iv, The - Proceedings Of The 4th International Conference On The Structure Of Surfaces

Author: X D Xie

Publisher: World Scientific

Published: 1994-06-22

Total Pages: 658

ISBN-13: 9814552445

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The Fourth International Conference on the Structure of Surfaces provides a forum for the report of new results and less the review of the status of surface structure and the relationship between surface and interface structure and physical or chemical properties of interest. Also within the scope of the meeting are novel experimental and theoretical approaches for the determination of surface and interface structures, computer simulation of dynamic processes and new developments in instrumentation.


Advances in Computer Science, Engineering and Applications

Advances in Computer Science, Engineering and Applications

Author: David C. Wyld

Publisher: Springer Science & Business Media

Published: 2012-05-17

Total Pages: 1073

ISBN-13: 3642301118

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The International conference series on Computer Science, Engineering & Applications (ICCSEA) aims to bring together researchers and practitioners from academia and industry to focus on understanding computer science, engineering and applications and to establish new collaborations in these areas. The Second International Conference on Computer Science, Engineering & Applications (ICCSEA-2012), held in Delhi, India, during May 25-27, 2012 attracted many local and international delegates, presenting a balanced mixture of intellect and research both from the East and from the West. Upon a strenuous peer-review process the best submissions were selected leading to an exciting, rich and a high quality technical conference program, which featured high-impact presentations in the latest developments of various areas of computer science, engineering and applications research.


Surfaces and Interfaces: Physics and Electronics

Surfaces and Interfaces: Physics and Electronics

Author: R.S. Bauer

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 663

ISBN-13: 0444600167

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Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.