Hot Electrons in Semiconductors
Author: Erich Gornik
Publisher:
Published: 1985
Total Pages:
ISBN-13:
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Author: Erich Gornik
Publisher:
Published: 1985
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1985
Total Pages: 540
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1985
Total Pages: 540
ISBN-13:
DOWNLOAD EBOOKAuthor: E. Gornik
Publisher:
Published: 1985
Total Pages: 526
ISBN-13:
DOWNLOAD EBOOKContents: Magnetotransport and tunneling in heterostructures; Submicron devices; Hot electron quantum transport; Hot phonons; Hot carrier emission and streaming in semiconductors; Impact ionization and noise; Chaos; Hot carrier relaxation in 2D systems; Hot carrier relaxation in bulk semiconductors; Time resolved spectroscopy of hot carriers; Band offsets in heterostructures; Transient transport in devices; and Hot carrier drift velocity and diffusion.
Author: E. Gornik
Publisher:
Published: 1985
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1985
Total Pages: 572
ISBN-13:
DOWNLOAD EBOOKPart B has subtitle: Low temperature and solid state physics(1975-76); Physics of condensed matter (1977-1982), and part C has subtitle: Atomic, molecular and plasma physics; optics.
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
Published: 2013-11-11
Total Pages: 474
ISBN-13: 1489923446
DOWNLOAD EBOOKThe past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
Author:
Publisher:
Published: 199?
Total Pages: 890
ISBN-13:
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