Point Defects in Semiconductors and Insulators
Point Defects in Semiconductors and Insulators

Author: Johann-Martin Spaeth

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 497

ISBN-13: 3642556159

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The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Point Defects in Semiconductors I
Point Defects in Semiconductors I

Author: M. Lannoo

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 283

ISBN-13: 364281574X

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From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Solid State Physics
Solid State Physics

Author: J. S. Blakemore

Publisher: Cambridge University Press

Published: 1985-12-12

Total Pages: 520

ISBN-13: 9780521313919

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Updated to reflect recent work in the field, this book emphasizes crystalline solids, going from the crystal lattice to the ideas of reciprocal space and Brillouin zones, and develops these ideas for lattice vibrations, for the theory of metals, and for semiconductors. The theme of lattice periodicity and its varied consequences runs through eighty percent of the book. Other sections deal with major aspects of solid state physics controlled by other phenomena: superconductivity, dielectric and magnetic properties, and magnetic resonance.

Point Defects in Semiconductors and Insulators
Point Defects in Semiconductors and Insulators

Author: Johann-Martin Spaeth

Publisher: Springer Science & Business Media

Published: 2003-01-22

Total Pages: 508

ISBN-13: 9783540426950

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The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Theory of Defects in Solids
Theory of Defects in Solids

Author: A. M. Stoneham

Publisher: Oxford University Press

Published: 2001

Total Pages: 982

ISBN-13: 9780198507802

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This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature

Structural Analysis of Point Defects in Solids
Structural Analysis of Point Defects in Solids

Author: Johann-Martin Spaeth

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 376

ISBN-13: 3642844057

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Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.

Defects in Semiconductors
Defects in Semiconductors

Author:

Publisher: Academic Press

Published: 2015-06-08

Total Pages: 458

ISBN-13: 0128019409

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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Field Theories for Low-Dimensional Condensed Matter Systems
Field Theories for Low-Dimensional Condensed Matter Systems

Author: Guiseppe Morandi

Publisher: Springer Science & Business Media

Published: 2013-03-14

Total Pages: 286

ISBN-13: 3662042738

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This book is especially addressed to young researchers in theoretical physics with a basic background in Field Theory and Condensed Matter Physics. The topics were chosen so as to offer the largest possible overlap between the two expertises, selecting a few key problems in Condensed Matter Theory which have been recently revisited within a field-theoretic approach. The presentation of the material is aimed not only at providing the reader with an overview of this exciting frontier area of modern theoretical physics, but also at elucidating most of the tools needed for a technical comprehen sion of the many papers appearing in current issues of physics journals and, hopefully, to enable the reader to tackle research problems in this area of physics. This makes the material a live creature: while not pretending it to be exhaustive, it is tutorial enough to be useful to young researchers as a starting point in anyone of the topics covered in the book.

Physics of Transition Metal Oxides
Physics of Transition Metal Oxides

Author: Sadamichi Maekawa

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 345

ISBN-13: 3662092980

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The fact that magnetite (Fe304) was already known in the Greek era as a peculiar mineral is indicative of the long history of transition metal oxides as useful materials. The discovery of high-temperature superconductivity in 1986 has renewed interest in transition metal oxides. High-temperature su perconductors are all cuprates. Why is it? To answer to this question, we must understand the electronic states in the cuprates. Transition metal oxides are also familiar as magnets. They might be found stuck on the door of your kitchen refrigerator. Magnetic materials are valuable not only as magnets but as electronics materials. Manganites have received special attention recently because of their extremely large magnetoresistance, an effect so large that it is called colossal magnetoresistance (CMR). What is the difference between high-temperature superconducting cuprates and CMR manganites? Elements with incomplete d shells in the periodic table are called tran sition elements. Among them, the following eight elements with the atomic numbers from 22 to 29, i. e. , Ti, V, Cr, Mn, Fe, Co, Ni and Cu are the most im portant. These elements make compounds with oxygen and present a variety of properties. High-temperature superconductivity and CMR are examples. Most of the textbooks on magnetism discuss the magnetic properties of transition metal oxides. However, when one studies magnetism using tradi tional textbooks, one finds that the transport properties are not introduced in the initial stages.