Physics and Technology of High-k Gate Dielectrics I
Author: Samares Kar
Publisher:
Published: 2003
Total Pages: 330
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author: Samares Kar
Publisher:
Published: 2003
Total Pages: 330
ISBN-13:
DOWNLOAD EBOOKAuthor: Gang He
Publisher: John Wiley & Sons
Published: 2012-08-10
Total Pages: 560
ISBN-13: 3527646361
DOWNLOAD EBOOKA state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author: Samares Kar
Publisher: The Electrochemical Society
Published: 2004
Total Pages: 512
ISBN-13: 9781566774055
DOWNLOAD EBOOK"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
Author: Samares Kar
Publisher: The Electrochemical Society
Published: 2006
Total Pages: 565
ISBN-13: 1566775035
DOWNLOAD EBOOKThis issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author: Samares Kar
Publisher: The Electrochemical Society
Published: 2007
Total Pages: 676
ISBN-13: 1566775701
DOWNLOAD EBOOKThis issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author: S. Kar
Publisher: The Electrochemical Society
Published: 2008-10
Total Pages: 550
ISBN-13: 1566776511
DOWNLOAD EBOOKThe issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author: Michel Houssa
Publisher: CRC Press
Published: 2003-12-01
Total Pages: 614
ISBN-13: 1420034146
DOWNLOAD EBOOKThe drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author: D. Misra
Publisher: The Electrochemical Society
Published:
Total Pages: 411
ISBN-13: 1607688182
DOWNLOAD EBOOKAuthor: S. Kar
Publisher: The Electrochemical Society
Published: 2014
Total Pages: 203
ISBN-13: 1607685450
DOWNLOAD EBOOKAuthor: Niladri Pratap Maity
Publisher: CRC Press
Published: 2020-12-18
Total Pages: 248
ISBN-13: 1000527441
DOWNLOAD EBOOKThis volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.