Semiconductor Materials Analysis and Fabrication Process Control
Semiconductor Materials Analysis and Fabrication Process Control

Author: G.M. Crean

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 352

ISBN-13: 0444596917

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There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

Properties of Gallium Arsenide
Properties of Gallium Arsenide

Author: M. R. Brozel

Publisher: Inst of Engineering & Technology

Published: 1996

Total Pages: 981

ISBN-13: 9780852968857

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It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Processing and Properties of Compound Semiconductors
Processing and Properties of Compound Semiconductors

Author:

Publisher: Elsevier

Published: 2001-10-20

Total Pages: 333

ISBN-13: 0080541011

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

Author: Ikegami

Publisher: CRC Press

Published: 1993-01-01

Total Pages: 1002

ISBN-13: 9780750302500

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Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Laser Surface Processing and Characterization
Laser Surface Processing and Characterization

Author: I.W. Boyd

Publisher: Elsevier

Published: 1992-03-09

Total Pages: 552

ISBN-13: 0444596801

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The contributions in this volume reflect not only the growing understanding of the underlying mechanisms controlling the various reactions in laser surface processing, but also the potential of several developing applications of direct processing. The most notable trend in the field currently is the technique of laser ablation, which is reported in almost a quarter of the papers in this volume. Whilst by no means a new phenomenon, attention has until recent years remained in the area of lithography and UV-sensitive materials. The growth in interest lies in the use of the technique to grow multi-component thin films and multi-layers. A number of papers on the topic of process diagnostics and in-situ measurements are also included. The theme of these annual meetings is centred around the physical and chemical modification of thin films and surfaces induced by the action of photon, ion, neutral, or electron beams in a variety of environments. Consequently these proceedings provide a comprehensive and unified presentation of the latest developments in this field.

Laser Processing and Diagnostics
Laser Processing and Diagnostics

Author: D. Bäuerle

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 561

ISBN-13: 3642823815

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Laser processing is now a rapidly increasing field with many real and potential applications in different areas of technology such as micromecha nics, metallurgy, integrated optics, and semiconductor device fabrication. The neces s ity for such soph i st i cated 1 i ght sources as 1 asers is based on the spatial coherence and the monochromaticity of laser light. The spatial coherence permits extreme focussing of the laser light resulting in the availability of high energy densities which can be used for strongly loca lized heat- and chemical-treatment of materials, with a resolution down to 1 ess than 1 lJIll. When us i ng pul sed or scanned cw-l asers, 1 oca 1 i zat i on in time is also possible. Additionally, the monochromaticity of laser light allows for control of the depth of heat treatment and/or selective, nonthermal bond breaking - within the surface of the material or within the molecules of the surrounding reactive atmosphere - simply by tuning the laser wavelength. These inherent advantages of laser light permit micromachining of materials (drilling, cutting, welding etc.) and also allow single-step controlled area processing of thin films and surfaces. Processes include structural transformation (removal of residual damage, grain growth in polycrystalline material, amorphization, surface hardening etc.), etching, doping, alloying, or deposition. In addition, laser processing is not 1 imited to planar substrates.

Topics In Growth And Device Processing Of Iii-v Semiconductors
Topics In Growth And Device Processing Of Iii-v Semiconductors

Author: Cammy R Abernathy

Publisher: World Scientific

Published: 1996-11-09

Total Pages: 565

ISBN-13: 981450159X

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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.