Monte Carlo Simulation of Coarsening in a Model of Submonolayer Epitaxy Growth
Author: Xiaoyang Hu
Publisher:
Published: 1998
Total Pages: 104
ISBN-13:
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Author: Xiaoyang Hu
Publisher:
Published: 1998
Total Pages: 104
ISBN-13:
DOWNLOAD EBOOKAuthor: Pushpa Raj Pudasaini
Publisher: LAP Lambert Academic Publishing
Published: 2011-08-01
Total Pages: 100
ISBN-13: 9783845417271
DOWNLOAD EBOOKThe physics of surface and interface is an increasingly important area in the field of condensed matter physics. This book provides a comprehensive introduction to the kinetic Monte Carlo simulation for the submonolayer crystal growth phenomenon. The growth from vapor is studied under the condition meet in molecular beam epitaxy (MBE). It describes the basic physical processes, such as atomic process during growth, formulation of growth models, and surface diffusion and nucleation theory. It covers the effect of small-cluster mobility and adatom detachment on the island formation during the submonolayer epitaxial growth of the thin films deposition under the various conditions. This book may be useful for the undergraduates, graduate students and researchers in the field of surface and interface physics.
Author: Giridhar Nandipati
Publisher:
Published: 2009
Total Pages: 282
ISBN-13:
DOWNLOAD EBOOKThe main objective of the work presented in this thesis is to develop new methods to extend the time and length scales of atomistic kinetic Monte Carlo (KMC) simulations. When all the relevant processes and their activation barriers are known, KMC is an extremely efficient method to carry out atomistic simulations for longer time scales. However, in some cases (ex. low barrier repetitive events) direct KMC simulations may not be sufficient to reach the experimentally relevant length and time scales. Accordingly, we have tested and developed several different parallel KMC algorithms and also developed a dynamic boundary allocation (DBA) method to improve parallel efficiency by reducing number of boundary events. Results for parallel KMC simulations of Ag(111) island coarsening at room temperature carried out using a large database of processes obtained from previous self-learning KMC simulations are also presented. We find that at long times the coarsening behavior corresponds to Ostwald ripening. We also find that the inclusion of concerted small-cluster events has a significant impact on the average island size. In addition, we have also developed a first passage time (FPT) approach to KMC simulations to accelerate KMC simulation of (100) multilayer epitaxial growth with rapid edge diffusion. In our FPT approach, by mapping edge-diffusion to a 1D random walk, numerous diffusive hops are replaced with first-passage time to make one large jump to a new location. As a test, we have applied our method to carry out multilayer growth simulations of three different models. We note that despite the additional overhead, the FPT approach leads to a significant speed-up compared to regular KMC simulations. Finally, we present results obtained from KMC simulations of irreversible submonolayer island growth with strain and rapid island relaxation. Our results indicate that in the presence of large strain there is significant anisotropy in qualitative agreement with experiments on InAs/GaAs and Ge/Si growth. Somewhat surprisingly, we also find that the scaled island-size distribution depends only weakly on the effects of strain. This is in qualitative agreement with recent experimental results for InAs/GaAs(100) submonolayer growth.
Author:
Publisher:
Published: 1974
Total Pages:
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DOWNLOAD EBOOKAuthor: Christopher Paul Burmester
Publisher:
Published: 1993
Total Pages: 230
ISBN-13:
DOWNLOAD EBOOKAuthor: Celso I. Fornari
Publisher:
Published: 2018
Total Pages:
ISBN-13:
DOWNLOAD EBOOKA numerical Monte Carlo (MC) model is described in detail to simulate epitaxial growth. This model allows the formation of structural defects, like substitutional defects and vacancies, and desorption of adsorbed atoms on the surface. The latter feature supports the study of epitaxial growth at very high kinetic regime. The model proposed here is applied to simulate the homoepitaxial growth of Si. The results obtained fit well to the experimental reports on (0 0 1) silicon homoepitaxy. The easy implementation of a large number of microscopic processes and the three-dimensional spatial information during the film growth suggests that the model can be applied to simulate the growth of binary, ternary, or more compounds and even the growth of superlattices and heterostructures.
Author: Max G Lagally
Publisher: World Scientific
Published: 1999-01-29
Total Pages: 508
ISBN-13: 9814496162
DOWNLOAD EBOOKThis book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
Author: Miroslav Kotrla
Publisher: Springer Science & Business Media
Published: 2002-07-31
Total Pages: 624
ISBN-13: 9781402006746
DOWNLOAD EBOOKEpitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Author: Dietrich Stauffer
Publisher: World Scientific
Published: 2000
Total Pages: 351
ISBN-13: 9810245246
DOWNLOAD EBOOKThis volume is based on an international school on ?Scaling and Disordered Systems? organized by M R H Khajehpour, M R Kolahchi and M Sahimi. Despite the common theme, it covers fields as diverse as basic and applied percolation, and biological prey-predator and ageing simulations. The advantages of computer simulation thus become particularly clear in the reviews, which have been written by leading experts.
Author: Luc T. Wille
Publisher:
Published: 1998-08-06
Total Pages: 306
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.