Microwave Semiconductor Devices, Circuits, and Applications
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Published: 1976*
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Published: 1976*
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DOWNLOAD EBOOKAuthor: Hugh A. Watson
Publisher:
Published: 1969
Total Pages: 646
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DOWNLOAD EBOOKAuthor: Hugh A. Watson
Publisher:
Published: 1969
Total Pages: 617
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DOWNLOAD EBOOKAuthor: Herbert J. Carlin
Publisher:
Published: 1973
Total Pages: 426
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DOWNLOAD EBOOKAuthor: University of Michigan. Engineering Summer Conferences
Publisher:
Published: 1974
Total Pages: 868
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DOWNLOAD EBOOKAuthor: H. A. Watson
Publisher:
Published: 1979
Total Pages:
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DOWNLOAD EBOOKAuthor: Sigfrid Yngvesson
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 481
ISBN-13: 1461539706
DOWNLOAD EBOOKWe have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
Author: University of Michigan. College of Engineering
Publisher:
Published: 1976
Total Pages:
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DOWNLOAD EBOOKAuthor: SITESH KUMAR ROY
Publisher: PHI Learning Pvt. Ltd.
Published: 2003-01-01
Total Pages: 214
ISBN-13: 9788120324183
DOWNLOAD EBOOKThe main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.
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