Materials Reliability in Microelectronics IV
Author: Materials Research Society
Publisher: Materials Research Society
Published: 1994-01-01
Total Pages:
ISBN-13: 9783380000006
DOWNLOAD EBOOKRead and Download eBook Full
Author: Materials Research Society
Publisher: Materials Research Society
Published: 1994-01-01
Total Pages:
ISBN-13: 9783380000006
DOWNLOAD EBOOKAuthor: Materials Research Society. Spring Meeting
Publisher:
Published: 1994
Total Pages: 666
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1999
Total Pages: 392
ISBN-13:
DOWNLOAD EBOOKAuthor: Peter Børgesen
Publisher: Materials Research Society
Published: 1994-10-19
Total Pages: 629
ISBN-13: 9781558992382
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: William F. Filter
Publisher:
Published: 1996-11-18
Total Pages: 616
ISBN-13:
DOWNLOAD EBOOKMRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Author:
Publisher:
Published: 1997
Total Pages: 488
ISBN-13:
DOWNLOAD EBOOKAuthor: James R. Lloyd
Publisher: Mrs Proceedings
Published: 1991-10-22
Total Pages: 390
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author:
Publisher:
Published: 1991
Total Pages: 392
ISBN-13:
DOWNLOAD EBOOKProceedings of the "MRS Symposium on Materials Reliability Issues in Microelectronics"--Dedication, p. xiii.
Author: Willem Dirk van Driel
Publisher: Springer Nature
Published: 2022-01-31
Total Pages: 552
ISBN-13: 3030815765
DOWNLOAD EBOOKThis book aims to provide a comprehensive reference into the critical subject of failure and degradation in organic materials, used in optoelectronics and microelectronics systems and devices. Readers in different industrial sectors, including microelectronics, automotive, lighting, oil/gas, and petrochemical will benefit from this book. Several case studies and examples are discussed, which readers will find useful to assess and mitigate similar failure cases. More importantly, this book presents methodologies and useful approaches in analyzing a failure and in relating a failure to the reliability of materials and systems.
Author: Anthony S. Oates
Publisher:
Published: 1995-10-24
Total Pages: 552
ISBN-13:
DOWNLOAD EBOOKThis long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.