Materials Issues in Vacuum Microelectronics: Volume 509
Materials Issues in Vacuum Microelectronics: Volume 509

Author: Wei Zhu

Publisher: Mrs Proceedings

Published: 1998-08-21

Total Pages: 232

ISBN-13:

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The 31 papers, about half of the symposium's presentations, were selected to provide a representative sampling of the present status of materials used in vacuum microelectronics. They range across all aspects of electron field emission from theory and physical mechanisms to device structure, but many focus on the fabrication, characterization, and modeling of electron emissive materials. The sections cover field-emitter arrays and applications, carbon and wide-bandgap cathodes, and other cathode materials. Reproduced from typescripts. Annotation copyrighted by Book News, Inc., Portland, OR

III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535
III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535

Author: S. A. Ringel

Publisher:

Published: 1999-08-11

Total Pages: 338

ISBN-13:

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This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.

GaN and Related Alloys: Volume 537
GaN and Related Alloys: Volume 537

Author: S. J. Pearton

Publisher:

Published: 1999-09-14

Total Pages: 1056

ISBN-13:

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This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

Scientific Basis for Nuclear Waste Management XXII: Volume 556
Scientific Basis for Nuclear Waste Management XXII: Volume 556

Author: David J. Wronkiewicz

Publisher:

Published: 1999-11-24

Total Pages: 1370

ISBN-13:

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Safe and effective management of nuclear waste provides a broad range of challenges for materials science. Waste processing, waste form and engineered barrier properties, interactions between engineered and geological systems, radiation effects, chemistry and transport of waste species, and long-term predictions of repository performance are just some of the scientific problems facing modern society. This book, the 22nd in a very successful series from MRS, offers an international and inter-disciplinary perspective on the issues, and features developments in both fundamental and applied areas. Topics include: development and characterization of ceramic waste forms; ceramic waste form corrosion; glass waste form processing; glass formulation, properties and structure; glass waste form corrosion; spent nuclear fuel; performance assessment; repository backfill; flow and transport; natural analogues; container corrosion; metal waste form corrosion; radionuclide speciation and solubility; radionuclide sorption; microbial effects; radiation effects; cement waste forms and waste treatment.

Diffusion Mechanisms in Crystalline Materials: Volume 527
Diffusion Mechanisms in Crystalline Materials: Volume 527

Author: Yuri Mishin

Publisher: Mrs Proceedings

Published: 1998-08-19

Total Pages: 576

ISBN-13:

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Participants of the symposium held in April 1998 in San Francisco as part of the 1998 MRS Spring Meeting cleared the fog at least on some aspects of solid-state diffusion, particularly experimental and simulation techniques that provide access to atomic-scale mechanisms of diffusion in diverse classes of crystalline materials. The 68 contributions (including 18 invited talks) added to the knowledge base in several key areas: diffusion mechanisms in metals and alloys, in intermetallic compounds, and in semiconductors; grain boundary and surface diffusion, and diffusion in quasicrystals; and diffusion and ionic conductivity in ionic materials. Annotation copyrighted by Book News, Inc., Portland, OR